Semiconductor device and peeling off method and method of manufacturing semiconductor device

ABSTRACT

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer  11  is provided on the substrate, and further, the oxide layer  12  being contact with the foregoing metal layer or nitride layer  11  is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer  12  by the physical means.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a method of peeling off a peeledoff layer, particularly, relates to a method of peeling off a peeled offlayer containing a variety of elements. In addition, the presentinvention relates to a semiconductor device having a circuit consistedof a thin film transistor (hereinafter, referred to as TFT) in which thepeeled off layer peeled off has been pasted and transferred on a basemember and a method of manufacturing the semiconductor device. Forexample, the present invention relates to an electro-optic device whichis represented by a liquid crystal module, a light emitting device whichis represented by an EL module and an electronic equipment on which sucha device is mounted as a part.

[0003] It should be noted that in the present specification, the term“semiconductor device” indicates a device in general capable offunctioning by utilizing the semiconductor characteristics, and anelectro-optic device, a light emitting device, a semiconductor circuitand an electronic equipment are all semiconductor device.

[0004] 2. Related Art

[0005] In recent years, a technology constituting a thin film transistor(TFT) using a semiconductor thin film (in the range from about a few toa few hundreds nm in thickness) formed on the substrate having aninsulating surface has drawn the attention. A thin film transistor iswidely applied to electronic devices such as an IC, an electro-opticdevice or the like, and particularly, there is an urgent need to bedeveloped as a switching element for an image display device.

[0006] Although as for applications utilizing such an image displaydevice, a variety of applications are expected, particularly, itsutilization for portable apparatuses has drawn the attention. Atpresent, although many glass substrates and quartz substrates areutilized, there are defaults of being easily cracked and heavy.Moreover, the glass substrates and quartz substrates are difficult to bemade larger on the basis of mass-production, and these are not suitablefor that. Therefore, the attempt that a TFT element is formed on asubstrate having flexibility, representatively, on a flexible plasticfilm has been performed.

[0007] However, since the heat resistance of a plastic film is low, itcannot help lowering the highest temperature of the process. As aresult, at present, a TFT is formed which has not so excellent electriccharacteristics compared with those formed on the glass substrates.Therefore, a liquid crystal display device and light emitting elementhaving a high performance by utilizing a plastic film have not beenrealized yet.

[0008] Moreover, a method of peeling off a peeled off layer existing onthe substrate via an isolated layer from the foregoing substrate hasbeen already proposed. For example, technologies described in JapaneseUnexamined Patent Publication No. H10-125929 gazette and JapaneseUnexamined Patent Publication No. H10-125931 gazette are technologiesthat an isolated layer consisted of an amorphous silicon (orpolysilicon) is provided, a laser beam is irradiated by transmitting thesubstrate and makes hydrogen contained in the amorphous siliconreleased, thereby occurring a space-gap and separating the substrate. Inaddition, there also has been the description in Japanese UnexaminedPatent Publication No. H10-125930 gazette that by utilizing thistechnology, a liquid crystal display device is completed by pasting apeeled off layer (in the gazette, referred to as transferred layer) on aplastic film.

[0009] However, in the above-described method, it is essential to use asubstrate having a high translucency, and further, for the purpose ofconferring a sufficient energy for releasing hydrogen contained in theamorphous silicon, the irradiation of a comparatively large laser beamis necessary, and consequently a problem that the peeled off layer isdamaged occurred. Moreover, in the above-described method, in the casewhere an element is prepared on an isolated layer, if a heat processingat a high temperature or the like is performed in the process of elementpreparation, hydrogen contained in the isolated layer is dispersed andreduced. In that case, even if the laser beam is irradiated on theisolated layer, there is a possibility that the peeling off is notsufficiently performed. Therefore, in order to maintain the amount ofhydrogen contained in the isolated layer, a problem occurs that theprocesses after the isolated layer formation are limited. Moreover, inthe above-described gazette, there has been also the description that inorder to prevent the damage to the peeled off layer, a radiation shieldlayer or a reflection layer is provided. However, in this case, it isdifficult to prepare a transmitting type liquid crystal display device.In addition, by the above-described method, it is difficult to peel offa peeled off layer having a large area.

SUMMARY OF THE INVENTION

[0010] The present invention has been carried out in consideration ofthe above-described problems, the present invention provides a peelingoff method of peeling off the peeled off layer without damaging thepeeled off layer, and aims at being capable of peeling off entirely overthe surface of the peeled off layer having a large area as well aspeeling off a peeled off layer having a small area.

[0011] Moreover, the present invention aims at providing a peeling offmethod of peeling off without receiving the limitations such as theheating processing temperature, the kind of substrate or the like in theformation of the peeled off layer.

[0012] Moreover, the present invention aims at providing a semiconductordevice weight-saved by pasting a peeled off layer on a variety of basemembers and its method of preparing it. Particularly, the presentinvention aims at providing a semiconductor device weight-saved bypasting a variety of elements (thin film diode, photoelectric conversionelement consisted of PIN junction of silicon) and its method ofpreparing it. When the present inventors carried out many experimentsand considered about these, the present inventors have found that duringthe time when the present inventors provided an nitride layer providedon the substrate, preferably a metal nitride layer, an oxide layer beingin contact with the foregoing metal nitride layer, and further performedthe film formation or the heat processing at the temperature of 500° C.or more on an oxide layer, the abnormality on the processes such as afilm peeling or the like does not occur, whereas the present inventorshave found a peeling off method in which it can be easily and clearlyseparated on the oxide layer or interface between them by adding aphysical force, representatively, a mechanical force (for example,peeled off by human hands).

[0013] Specifically, the bonding force between nitride layer and oxidelayer has a strength durable for heat energy, whereas since the filmstress of the nitride layer and the oxide layer is different from eachother and there exists a stress distortion between the nitride layer andthe oxide layer, dynamical energy is weak, it is suitable for peelingoff. The present inventors refer to the peeling off step in which thepeeling off is carried out by utilizing the film stress in that manneras a stress peeling off process.

[0014] It should be noted that in the present specification, theinternal stress of the film (referred to as film stress) is a force perunit sectional area where one side of the section has an influence onthe other side, when a given section in the internal of the film formedon the substrate is considered. The internal stress may always existmore or less in a thin film formed by a vacuum deposition, a sputtering,a vapor deposition method or the like. The value reaches 10⁹ N/m² at themaximum. The internal stress value changes by a material of a thin film,substance of the substrate, the formation conditions of the thin filmand the like. Moreover, the internal stress value changes also byperforming the heat processing.

[0015] Moreover, in the case where the force having an influence on theopponent through the unit sectional area which spread out vertically inrespect to the substrate surface works in the tensile direction, it isreferred to as tensile state, and the internal stress at that time isreferred to as the tensile stress. In the case where the force works inthe pushing direction, it is referred to as in a compressive state, andthe internal stress at that time is referred to as compressive stress.It should be noted that in the present specification, the tensile stressis plotted as a positive (+) number, and the compressive stress isplotted as a negative (−) number when these are graphed or indicated ina table.

[0016] The constitution 1 of the invention related to a peeling offmethod disclosed in the present specification, is a peeling off methodof peeling off a peeled off layer from a substrate,

[0017] it is characterized by the fact that on the foregoing substrate,a nitride layer is provided, after a peeled off layer consisted of alamination containing an oxide layer being in contact with at least theforegoing nitride layer was formed on the substrate on which theforegoing nitride layer has been provided, the relevant peeled off layeris peeled off on the inside of the oxide layer or on the interface withthe foregoing oxide layer from the substrate on which the foregoingnitride layer has been provided by the physical means.

[0018] Moreover, it may be peeled off after a support body was adheredusing an adhesive agent, the constitution 2 of the invention related toa peeling off method disclosed in the present specification,

[0019] is a peeling off method of peeling off a peeled off layer from asubstrate,

[0020] it is characterized by the fact that on the foregoing substrate,a nitride layer is provided, after a peeled off layer consisted of alamination containing an oxide layer being in contact with at least theforegoing nitride layer was formed on the substrate on which theforegoing nitride layer has been provided and the relevant peeled offlayer adhered to the foregoing supporting body is peeled off on theinside of the oxide layer or on the interface with the foregoing oxidelayer from the substrate on which the foregoing nitride layer has beenprovided by the physical means.

[0021] Moreover, in the above-described constitution 2, in order topromote the peeling off, the heat processing or the irradiation of alaser beam may be performed before the foregoing supporting body isadhered. In this case, it may be made so as to be easily peeled off byselecting a material absorbing the laser beam and heating the interfacebetween the nitride layer and the oxide layer. However, in the casewhere the laser beam is used, a translucent one is used as a substrate.

[0022] Moreover, in the above-described constitution, as for the nitridelayer, the other layer may be provided between the substrate and thenitride layer, for example, an insulating layer, a metal layer or thelike maybe provided. However, in order to simplify the process, it ispreferred that the nitride layer being in contact with the surface ofthe substrate is formed.

[0023] Moreover, instead of the nitride layer, a metal layer, preferablya nitride metal layer may be used, a metal layer, preferably a metalnitride layer is provided, and further, an oxide layer is provided incontact with the foregoing metal nitride layer, and further, if the filmformation processing or the heat processing of 500° C. or more intemperature is carried out, the film peeling does not occur, it can beeasily and clearly separated on the inside of the oxide layer or on theinterface with the oxide layer by the physical means.

[0024] The constitution 3 of the invention related to a peeling offmethod disclosed in the present specification, is a method of peelingoff a peeled off layer from a substrate,

[0025] it is characterized by the fact that on the foregoing substrate,a metal layer is provided, after a peeled off layer consisted of alamination containing an oxide layer being in contact with at least theforegoing metal layer was formed on the substrate on which the foregoingmetal layer has been provided, the relevant peeled off layer is peeledoff on the inside of the foregoing oxide layer or on the interface withthe oxide layer from the substrate on which the foregoing metal layerhas been provided by the physical means.

[0026] Moreover, it may be peeled off after the supporting body wasadhered using an adhesive, the constitution 4 of the invention relatedto a peeling off method disclosed in the present specification,

[0027] is a method of peeling off a peeled off layer from a substrate,and

[0028] it is characterized by the fact that on the foregoing substrate,a metal layer is provided, after a peeled off layer consisted of alamination containing an oxide layer being in contact with at least theforegoing metal layer was formed on the substrate on which the foregoingmetal layer has been provided, the peeled off layer adhered to theforegoing supporting body is peeled off on the inside of the foregoingoxide layer or on the interface with the oxide layer from the substrateon which the foregoing metal layer has been provided by the physicalmeans.

[0029] Moreover, in the above-described constitution 4, in order topromote the peeling off, the heat processing or the irradiation of alaser beam may be performed before the foregoing supporting body isadhered. In this case, it may be made so as to be easily peeled off byselecting a material absorbing the laser beam and heating the interfacebetween the metal layer and the oxide layer. However, in the case wherethe laser beam is used, a translucent one is used as a substrate.

[0030] It should be noted that in the present specification, thephysical means is referred to a means recognized by physics, not bychemistry, concretely, the term indicates a dynamic means or amechanical means having a process capable of attributing to the laws ofdynamics and also indicates a means for changing any dynamic energy(mechanical energy).

[0031] However, in either of the above-described constitution 2 andconstitution 4, when these are peeled off by the physical means, it isrequired so that the bonding force between the oxide layer and the metallayer is made smaller than the bonding force with the supporting body.Moreover, in the above-described constitution 3 or constitution 4, theforegoing metal layer is characterized by the fact that it is an elementselected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh,Pd, Os, Ir and Pt, a monolayer consisted of alloy materials or compoundmaterials whose principal component is the foregoing element, or alamination of these metals or a mixture of these.

[0032] Moreover, in the above-described constitution 3 or constitution4, as for the metal layer, the other layer, for example, an insulatinglayer or the like may be provided between the substrate and the metallayer, but in order to simplify the process, it is preferable that themetal layer being in contact with the surface of the substrate isformed.

[0033] Moreover, in the above-described present invention, all kinds ofsubstrates, not limited to a substrate having a translucency, forexample, a glass substrate, a quartz substrate, a semiconductorsubstrate, a ceramic substrate, a metal substrate can be used, and apeeled off layer provided on the substrate can be peeled off. Moreover,in the above-described respective constitutions, the foregoing oxidelayer is characterized by the fact that it is a monolayer consisted ofsilicon oxide material, or metal oxide material or lamination of these.

[0034] Moreover, in the above-described respective constitutions, inorder to promote the peeling off, the heat processing or the irradiationof a laser beam may be performed before the peeling off is performed bythe foregoing physical means.

[0035] Moreover, a semiconductor device can be fabricated by pasting(transferring) a peeled off layer provided on the substrate on thetransferring body using a peeling of method of the above-describedpresent invention, the constitution of the invention related to a methodof manufacturing a semiconductor device,

[0036] is a method of manufacturing a semiconductor device characterizedby the fact that it has the steps of,

[0037] forming a nitride layer on a substrate,

[0038] forming an oxide layer on the foregoing nitride layer,

[0039] forming an insulating layer on the foregoing oxide layer,

[0040] forming an element on the foregoing insulating layer, peeling offthe relevant supporting body on the inside of the oxide layer or on theinterface with the foregoing oxide layer from the substrate by thephysical means after the supporting body was adhered to the foregoingelement, and

[0041] adhering a transferring body to the foregoing insulating layer orthe foregoing oxide layer, and sandwiching the foregoing element betweenthe foregoing supporting body and the foregoing transferring body.

[0042] Moreover, in the above-described constitution, in order topromote the peeling off, the heat processing or the irradiation of alaser beam may be performed before the foregoing supporting body isadhered. In this case, it may be made so as to be easily peeled off byselecting a material for absorbing the laser beam for the nitride layerand heating the interface between the nitride layer and the oxide layer.However, in the case where the laser beam is used, a translucent one isused as a substrate. Moreover, in order to promote the peeling off, itmay be made so as to be easily peeled off by providing an oxide in agranular shape on the nitride layer, an oxide layer for covering therelevant oxide in a granular shape, the constitution of the inventionrelated to a method of manufacturing a semiconductor device,

[0043] is a method of preparing a semiconductor device, characterized bythe fact that it has the steps of, forming a nitride layer on asubstrate, forming an oxide in a granular shape on the foregoing nitridelayer,

[0044] forming an oxide layer for covering the foregoing oxide on theforegoing nitride layer,

[0045] forming an insulating layer on the foregoing oxide layer,

[0046] forming an element on the foregoing insulating layer, peeling offthe relevant supporting body on the inside of the oxide layer or on theinterface with the foregoing oxide layer from the substrate by thephysical means after the supporting body was adhered to the foregoingelement, and

[0047] adhering a transferring body to the foregoing insulating layer orthe foregoing oxide layer, and sandwiching the foregoing element betweenthe foregoing supporting body and the foregoing transferring body.

[0048] Moreover, the constitution of the invention related to a methodof preparing the other semiconductor device, is a method ofmanufacturing a semiconductor device, characterized by the fact that ithas the steps of, forming a layer containing a metal material on asubstrate,

[0049] forming an oxide layer on the foregoing layer containing themetal material,

[0050] forming an insulating layer on the foregoing oxide layer,

[0051] forming an element on the foregoing insulating layer, peeling offthe relevant supporting body on the inside of the oxide layer or on theinterface with the foregoing oxide layer from the substrate by thephysical means after the supporting body was adhered to the foregoingelement, and

[0052] adhering a transferring body to the foregoing insulating layer orthe foregoing oxide layer, and sandwiching the foregoing element betweenthe foregoing supporting body and the foregoing transferring body.

[0053] Moreover, in the above-described constitution, in order topromote the peeling off, the heat processing or the irradiation of alaser beam may be performed before the foregoing supporting body isadhered. In this case, it may be made so as to be easily peeled off byselecting a material absorbing the laser beam for the metal layer andheating the interface between the metal layer and the oxide layer.However, in the case where the laser beam is used, a translucent one isused as a substrate. Moreover, in order to promote the peeling off, itmay be made so as to be easily peeled off by providing an oxide in agranular shape on a layer containing a metal material and an oxide layerfor covering the relevant oxide in a granular shape, the constitution ofthe invention related to a method of manufacturing a semiconductordevice,

[0054] is a method of manufacturing a semiconductor device,characterized by the fact that it has the steps of, forming a layercontaining a metal material on a substrate,

[0055] forming an oxide in a granular shape on the foregoing layercontaining the metal material,

[0056] forming an oxide layer for covering the foregoing oxide,

[0057] forming an insulating layer on the foregoing oxide layer,

[0058] forming an element on the foregoing insulating layer, peeling offthe relevant supporting body on the inside of the oxide layer or on theinterface with the foregoing oxide layer from the substrate by thephysical means after the supporting body was adhered to the foregoingelement, and

[0059] adhering a transferring body to the foregoing insulating layer orthe foregoing oxide layer, and sandwiching the foregoing element betweenthe foregoing supporting body and the foregoing transferring body.

[0060] In the above-described constitution, it is preferable that theforegoing layer containing the metal material is a nitride, theforegoing metal material is characterized by the fact that it is anelement selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn,Ru, Rh, Pd, Os, Ir and Pt, a monolayer consisted of alloy materials orcompound materials whose principal component is the foregoing element,or a lamination of these metals or a mixture of these.

[0061] Moreover, a semiconductor device can be prepared by pasting apeeled off layer provided on the substrate on the first transferringbody or the second transferring body using a method of peeling off ofthe above-described present invention, the constitution of the inventionrelated to a method of manufacturing a semiconductor device,

[0062] is a method of manufacturing a semiconductor device characterizedby the fact that it has the steps of,

[0063] forming a layer containing a metal material on a substrate,

[0064] forming an oxide in a granular shape on the foregoing layercontaining the metal material,

[0065] forming an insulating layer on the foregoing oxide layer,

[0066] forming an element on the foregoing insulating layer, peeling offon the inside of the oxide layer or on the interface with the foregoingoxide layer from the substrate by the physical means,

[0067] adhering the first transferring body to the foregoing insulatinglayer or the foregoing oxide layer, and adhering the second transferringbody to the foregoing element and sandwiching the foregoing elementbetween the foregoing first transferring body and the foregoing secondtransferring body.

[0068] In the above-described constitution, it is preferable that theforegoing layer containing the metal material is a nitride, theforegoing metal material is characterized by the fact that it is anelement selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn,Ru, Rh, Pd, Os, Ir and Pt, a monolayer consisted of alloy materials orcompound materials whose principal component is the foregoing element,or a lamination of these metals or a mixture of these.

[0069] Moreover, the constitution of the invention related to a methodof preparing the other semiconductor device, is a method ofmanufacturing a semiconductor device characterized by the fact that ithas the steps of,

[0070] forming a nitride layer on a substrate,

[0071] forming an oxide layer on the foregoing nitride layer,

[0072] forming an insulating layer on the foregoing oxide layer,

[0073] forming an element on the foregoing insulating layer, peeling offon the inside of the oxide layer or on the interface with the foregoingoxide layer from the substrate by the physical means,

[0074] adhering the first transferring body to the foregoing insulatinglayer or the foregoing oxide layer, and adhering the second transferringbody to the foregoing element and sandwiching the foregoing elementbetween the foregoing first transferring body and the foregoing secondtransferring body.

[0075] Moreover, in the above-described respective constitutions relatedto a method of manufacturing the above-described semiconductor device,the foregoing oxide layer is characterized by the fact that it is amonolayer consisted of a silicon oxide material or a metal oxidematerial or a lamination of these.

[0076] Moreover, in the above-described respective constitutions relatedto a method of preparing the above-described semiconductor device, inorder to further promote the peeling off, the heating processing or theirradiation of laser beam may be performed before the peeling off isperformed by the foregoing physical means.

[0077] Moreover, in the above-described respective constitutions relatedto a method of manufacturing the above-described semiconductor device,the foregoing element is characterized by the fact that it is a thinfilm transistor comprising a semiconductor layer as an active layer, thestep of forming the foregoing semiconductor layer is a step in which asemiconductor layer having an amorphous structure is crystallized byperforming the heat processing or the irradiation of a laser beam, andmaking it a semiconductor layer having a crystalline structure.

[0078] It should be noted that in the present specification, the term“transferring body” is one for being adhered to the peeled layer afterit was peeled off, is not particularly limited, and may be a base memberof any component such as plastic, glass, metal, ceramics or the like.Moreover, in the present specification, the term “supporting body” maybe one for being adhered to the peeled layer when it is peeled off bythe physical means, is not particularly limited, may be a base member ofany component such as plastics, glass, metal, ceramics, or the like.Moreover, the shape of the transferring body and the shape of thesupporting body are neither particularly limited, and may be one havinga plane, one having a curved surface, one having a surface capable ofbeing curved, or one in a film shape. Moreover, if the weight saving isthe top priority, it is preferable that it is a plastic substrate in afilm shape, for example, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC),nylon, polyether ether ketone (PEEK), polysulfone (PSF), polyether imide(PEI), polyarylate (PAR), polybutylene terephthalate (PBT), polyimide orthe like. In the above-described respective constitution related to amethod of manufacturing the above-described semiconductor device, in thecase where a liquid crystal display device is prepared, the supportingbody is made as an opposing substrate, the supporting body may beadhered to the peeled off layer by utilizing a sealing member as anadhesive member. In this case, an element provided on the foregoingpeeled off layer has a pixel electrode, and it is made so that a liquidcrystal material is packed between the relevant pixel electrode and theforegoing opposing substrate.

[0079] Moreover, in the above-described respective constitution relatedto a method of preparing the above-described semiconductor device, inthe case where a light emitting device represented by a light emittingdevice having an OLED is prepared, it is preferable that a lightemitting element is completely interrupted from the external so as toprevent substances such as water content, oxygen or the like whichpromotes the deterioration of an organic compound layer from penetratingfrom the external. Moreover, if the weight saving is the top priority,it is preferable that a plastic substrate in a film shape is used.However, since it is weak in an effect to prevent substances such aswater content, oxygen or the like promoting the deterioration of theorganic compound layer from penetrating from the external, it may beconfigured, for example, so that it sufficiently prevents substancessuch as water content, oxygen or the like promoting the deterioration ofthe organic compound layer from penetrating from the external byproviding the first insulating film, the second insulating film and thethird insulating film on the supporting body. However, the foregoingsecond insulating film (stress relaxation) sandwiched between theforegoing first insulating film (barrier film) and the foregoing thirdinsulating film (barrier film) is made so that its film stress issmaller than those of the foregoing first insulating film and theforegoing third insulating film.

[0080] Moreover, in the case where a light emitting device representedby a light emitting device having an OLED is prepared, it is preferablethat the invasion of substances such as water content, oxygen, or thelike from the external is sufficiently prevented by providing the firstinsulating film, the second insulating film and the third insulatingfilm not only on the supporting body but also similarly on thetransferring body.

EXPERIMENT 1

[0081] Here, an oxide layer being in contact with a nitride layer or ametal layer was provided, and in order to verify whether or not a peeledlayer could be peeled off from the substrate, the following experimentwas carried out.

[0082] First, a lamination as indicated in FIG. 3A was formed on thesubstrate.

[0083] As a substrate 30, a glass substrate (#1737) was used. Moreover,on the substrate 30, an aluminum-silicon alloy layer 31 was formed inthickness of 300 nm by a sputtering method. Subsequently, a titaniumnitride layer 32 was formed in thickness of 100 nm by a sputteringmethod. Subsequently, a silicon oxide layer 33 was formed in thicknessof 200 nm by a sputtering method. The film formation conditions of thesilicon oxide layer 33 were made as 150° C. of the substratetemperature, 0.4 Pa of the film forming pressure, 3 kW of the filmforming electric power, Argon volumetric flow rate/oxygen volumetricflow rate=35 sccm/15 sccm by utilizing a sputtering apparatus of RFmethod, and by utilizing silicon oxide target (diameter, 30.5 cm).

[0084] Subsequently, a primary coat insulating layer was formed on thesilicon oxide layer 33 by a plasma CVD method. As a primary coatinsulating layer, a silicon oxynitride film 34 a (composition ratioSi=32%, O=27%, N=24%, and H=17%) prepared from the raw material gasesSiH₄, NH₃, and N₂O was formed in thickness of 50 nm at 300° C. of thefilm formation temperature by a plasma CVD method. Subsequently, afterthe surface was washed by ozone water, the oxide film of the surface wasremoved by dilute hydrofluoric acid (1:100 dilution). Subsequently, asilicon oxynitride film 34 b (composition ratio Si=32%, O=59%, N=7%, andH=2%) prepared from the raw material gases SiH₄ and N₂O waslamination-formed in thickness of 100 nm at 300° C. of the filmformation temperature by a plasma CVD method, and further, asemiconductor layer (here, an amorphous silicon layer 35) having anamorphous structure was formed in thickness of 54 nm at 300° C. of thefilm formation temperature without the air release by a plasma CVDmethod (FIG. 3A).

[0085] Subsequently, nickel acetate solution containing 10 ppm of nickelwhen it is converted to weight was coated by a spinner. A method ofspreading over the entire surface with nickel element by a sputteringmethod instead of coating may be employed. Subsequently, a semiconductorfilm having a crystal structure (here, polysilicon layer 36) was formedby performing the heat processing and crystallizing it (FIG. 3B). Here,after the heat processing (500° C., one hour) for dehydrogenation wascarried out, a silicon film having a crystal structure was obtained byperforming the heat processing for crystallization (550° C., 4hours). Itshould be noted that although here, a crystallization technology usingnickel as a metal element for promoting the crystallization of siliconis used, the other known crystallization technology, for example, solidphase crystallization method or laser crystallization method may beused. Subsequently, as an adhesive layer 37, an epoxy resin was used,and a film substrate 38 (here, polyethylene terephthalate (PET)) waspasted on a polysilicon layer 36 (FIG. 3C).

[0086] After the state of FIG. 3C was obtained, these were pulled byhuman hands so that the film substrate 38 and the substrate 30 would beseparated. It could be recognized that at least titanium nitride andaluminum-silicon alloy layer remained on the substrate 30 which has beenpulled away. It is expected that it is peeled off on the inside of thesilicon oxide 33 or on the interface with the silicon oxide 33 by thisexperiment.

[0087] In this way, the peeled layer can be peeled off from the entiresurface of the substrate 30 by providing an oxide layer being in contactwith a nitride layer or a metal layer and pulling away the peeled layerprovided on the relevant oxide layer.

EXPERIMENT 2

[0088] In order to specify the location where the peeling off wasoccurred, it was partially peeled off by a method of peeling off of thepresent invention, and an experiment for examining the cross sectionnearby its boundary was carried out.

[0089] As a substrate, the glass substrate (#1737) was used. Moreover,on the substrate, a titanium nitride layer was formed in thickness of100 nm on the substrate by a sputtering method.

[0090] Subsequently, a silicon oxide layer was formed in thickness of200 nm by a sputtering method. The conditions for film formation of thesilicon oxide layer were made as 150° C. of the substrate temperature,0.4 Pa of the film forming pressure, 3 kW of the film formation electricpower, Argon volumetric flow rate/oxygen volumetric flow rate=35 sccm/15sccm by utilizing a sputtering apparatus of RF method, and by utilizingsilicon oxide target (diameter, 30.5 cm).

[0091] Subsequently, a primary coat insulating layer was formed on thesilicon oxide layer by a plasma CVD method. As a primary coat insulatinglayer, a silicon oxynitride film (composition ratio Si=32%, O=27%, N=24%and H=17%) prepared from the raw material gases SiH₄, NH₃, and N₂O wasformed in thickness of 50 nm at 300° C. of the film formationtemperature by a plasma CVD method.

[0092] Subsequently, after the surface was washed by ozone water, theoxide film of the surface was removed by dilute hydrofluoric acid (1:100dilution). Subsequently, a silicon oxynitride film (composition ratioSi=32%, O=59%, N=7% and H=2%) prepared from the raw material gases SiH₄and N₂O was lamination-formed in thickness of 100 nm at 300° C. of thefilm formation temperature by a plasma CVD method, and further, asemiconductor layer (here, an amorphous silicon layer) having anamorphous structure was formed in thickness of 54 nm at 300° C. of thefilm formation temperature without the air release by a plasma CVDmethod.

[0093] Subsequently, nickel acetate solution containing 10 ppm of nickelwhen converting to weight value was coated by a spinner. A method ofspreading over the entire surface with nickel element by a sputteringmethod instead of coating may be employed. Subsequently, a semiconductorfilm having a crystal structure (here, polysilicon layer) was formed byperforming the heat processing and crystallizing it. Here, after theheat processing (500° C., one hour) for dehydrogenation was carried out,a silicon film having a crystal structure was obtained by performing theheat processing for crystallization (550° C., 4 hours).

[0094] Subsequently, an adhesive tape was pasted on the portion of thepolysilicon layer, and these were pulled so that the adhesive tape andthe substrate are separated by human hands. Then, only the locationwhere the adhesive tape was pasted was peeled off, and transferred tothe tape. A TEM photograph on the peeled boundary on the substrate sideis shown in FIG. 20A, and its schematic diagram is shown in FIG. 20B.

[0095] As shown in FIG. 20, the titanium nitride layer entirely remainedon the glass substrate, the portion where the tape was adhered andtransferred was clearly transferred, the lamination (SiO₂ film by asputtering method, the insulating films (1) and (2) by PCVD method, andpolysilicon film) was removed. From these, it is understood that thepeeling occurred on the interface between the titanium nitride layer andSiO₂ film by a sputtering method.

EXPERIMENT 3

[0096] Here, in the case where the material of a nitride layer or ametal layer was made TiN, W and WN, in order to verify whether or notthe peeled layer provided on the oxide layer can be peeled off, thefollowing experiment was carried out by providing an oxide layer(silicon oxide: film thickness, 200 nm) being in contact with thenitride layer or the metal layer.

[0097] As the Sample 1, after TiN was formed in film thickness of 100 nmon the glass substrate by utilizing a sputtering method, a silicon oxidefilm with a thickness of 200 nm was formed by sputtering. Afterperforming the step of the formation of the silicon oxide, thelamination and crystallization were performed similarly to Experiment 1.

[0098] As a Sample 2, after W was formed in film thickness of 50 nm onthe glass substrate by a sputtering method, a silicon oxide film of 200nm in thickness was formed by utilizing a sputtering method. Afterperforming the step of the formation of the silicon oxide film, thelamination and crystallization were performed similarly to Experiment 1.

[0099] As a Sample 3, after WN was formed in film thickness of 50 nm onthe glass substrate by a sputtering method, a silicon oxide film of 200nm in thickness was formed by utilizing a sputtering method. Afterperforming the step of the formation of the silicon oxide film, thelamination and crystallization were performed similarly to Experiment 1.

[0100] In this way, Samples 1-3 were formed, and in order to confirmwhether or not the peeled layer is peeled off by adhering an adhesivetape to the peeled layer, an experiment was carried out. The results areshown in Table 1. TABLE 1 First material Second material layer layer(Lower layer) (Upper layer) Tape test Sample 1 TIN (100 nm) Siliconoxide Peeled off (200 nm) Sample 2 W (50 nm) Silicon oxide Peeled off(200 nm) Sample 3 WN (50 nm) Silicon oxide Peeled off (200 nm)

[0101] Moreover, the internal stress on the respective silicon oxidefilm, TiN film, W film before and after the heat processing (550° C., 4hours) was measured. The results are indicated in Table 2. TABLE 2Internal stress value of film (dyne/cm²) After film formation After heatprocessing Silicon oxide −9.40E+08 −1.34E+09 film −9.47E+08 −1.26E+09TiN film 3.90E+09 4.36E+09 3.95E+09 4.50E+09 W film −7.53E+09 8.96E+09−7.40E+09 7.95E+09

[0102] It should be noted that as for the silicon oxide film, the filmformed in film thickness of 400 nm on the silicon substrate by asputtering method was measured. As for TiN film and W film, after thesewere formed in film thickness of 400 nm on the glass substrate by asputtering method, the internal stress was measured, then, an siliconoxide film was laminated as a cap film. After the heat processing wasperformed, the cap film was removed by an etching, and then the internalstress was measured again. Moreover, 2 pieces of the respective samplewas prepared and the measurements were carried out.

[0103] As for W film, although it has the compressive stress (about−7×10⁹ (Dyne/cm²)) immediately after the film formation, the film hasthe tensile stress (about 8×10⁹−9×10⁹ (Dyne/cm²)) by the heatprocessing, and the peeling off state was excellent. As for TiN film,the stress was hardly changed before and after the heating processing,it remained as it had the tensile stress (about 3.9×10⁹−4.5×10⁹(Dyne/cm²)). Moreover, as for the silicon oxide film, the stress washardly changed before and after the heat processing, it remained as ithad the compressive stress (about −9.4×10⁸-−1.3×10⁹ (Dyne/cm²)).

[0104] From these results, it can be read that the peeling phenomenonrelates to adhesiveness due to a variety of factors, however,particularly, is deeply concerned with the internal stress, in the casewhere the oxide layer was formed on the nitride layer or the metallayer, the peeled layer can be peeled off from the entire surface of theinterface between the nitride layer or the metal layer and the oxidelayer.

EXPERIMENT 4

[0105] To examine dependency on a heating temperature, the followingexperiment was conducted.

[0106] As a sample, after forming a W film (tungsten film) over asubstrate to a thickness of 50 nm by sputtering, a silicon oxide filmwas formed to a thickness of 200 nm by using a sputtering (argon gasflow rate of 10 sccm, oxygen gas flow rate of 30 sccm, a film formationpressure of 0.4 Pa, sputtering electric power of 3 kW, a substratetemperature of 300° C., using a silicon target). Next, a primary coatinsulating layer (silicon oxinitride film of 50 nm and siliconoxinitride film of 100 nm) and an amorphous silicon film of 54 nm inthickness are formed by plasma CVD in the same way as Experiment 1.

[0107] Next, after conducting heat treatment while varying conditions ofheating temperatures, a quartz substrate is stuck on an amorphoussilicon film (or a polysilicon film) by using an adhesive material, andthe quartz substrate and the glass substrate are separated from eachother by pulling them away by human's eye to examine whether they can bepeeled off or not. The condition 1 for the heating temperature is 500°C. and 1 hour, and the condition 2 is 450° C. and 1 hour, and thecondition 3 is 425° C. and 1 hour, the condition 4 is 410° C. and 1hour, and the condition 5 is 400° C. and 1 hour, and the condition 6 is350° C. and 1 hour.

[0108] As a result of the experiments, the sample can be peeled offunder the conditions 1 to 4. The sample can not be peeled off under theconditions 5 and 6. Accordingly, in the peeling off method according tothe present invention, it is preferred that the thermal treatment isconducted at least 410° C. or higher.

[0109] Further, when the W film is peeled off, the W film remains on theentire surface of the glass substrate, and a lamination layer (SiO₂ filmby sputtering, and insulating films (1) and (2) by PCVD, and anamorphous silicon film) is transferred on the quarts substrate. FIG. 21shows results for measuring a surface of the transferred SiO₂ film byTXRF. The surface roughness Rz (thirty points) are 5.44 nm by AFMmeasurement. Further, FIG. 22 shows results for measuring a surface ofthe W film with 50 nm formed on the quartz substrate as a reference. Thesurface roughness Rz (thirty points) is 22.8 nm by AFM measurement.Further, FIG. 23 shows results for measuring only the quartz substrateby TXRF. Because W (tungsten) peaks of FIGS. 21 and 22 are similar whenthey are compared, it is found that a little metallic material (tungstenhere) is stuck on a surface of the transferred SiO₂ film.

[0110] According to constitution of the present invention disclosed inthe present specification, a semiconductor device comprises a support,and a peeled off layer adhered to the support by an adhesive material,and a silicon oxide film, a little metallic material provided betweenthe silicon oxide film and the adhesive material.

[0111] In the above constitution, the metallic material comprises anelement selected from the group consisting of W, Ti, Al, Ta, Mo, Cu, Cr,Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, or an alloy materialor a compound material which comprises the above element as a maincomponent.

BRIEF DESCRIPTION OF THE DRAWINGS

[0112]FIGS. 1A to 1C are diagrams for illustrating Embodiment 1 of thepresent invention;

[0113]FIGS. 2A to 2 c are diagrams for illustrating Embodiment 2 of thepresent invention;

[0114]FIGS. 3A to 3D are diagrams for illustrating experiments of thepresent invention;

[0115]FIGS. 4A to 4C are diagrams for illustrating Embodiment 3 of thepresent invention;

[0116]FIGS. 5A to 5C are diagrams for illustrating Embodiment 4 of thepresent invention;

[0117]FIGS. 6A to 6D are diagrams showing the preparing steps of activematrix substrate;

[0118]FIGS. 7A to 7C are diagrams showing the preparing steps of activematrix substrate;

[0119]FIG. 8 is a diagram showing an active matrix substrate;

[0120]FIGS. 9A to 9D are diagrams for illustrating Example 2 of thepresent invention;

[0121]FIGS. 10A to 10E are diagrams for illustrating Example 3 of thepresent invention;

[0122]FIG. 11 is a diagram for illustrating Example 4 of the presentinvention;

[0123]FIG. 12 is a diagram for illustrating Example 5 of the presentinvention;

[0124]FIGS. 13A to 13D are diagrams for illustrating Example 6 of thepresent invention;

[0125]FIGS. 14A to 14C are diagrams for illustrating Example 7 of thepresent invention;

[0126]FIG. 15 is a diagram for illustrating Example 8 of the presentinvention;

[0127]FIGS. 16A and 16B are diagrams for illustrating Example 9 of thepresent invention;

[0128]FIG. 17 is a diagram for illustrating Example 9 of the presentinvention;

[0129]FIGS. 18A to 18F are diagrams showing one example of an electronicequipment;

[0130]FIGS. 19A to 19C are diagrams showing one example of an electronicequipment;

[0131]FIGS. 20A and 20B are cross sectional TEM photograph and aschematic diagram of the boundary location partially peeled off.

[0132]FIG. 21 is a graph showing results for measuring a surface of thepeeled off silicon oxide film by TXRF.

[0133]FIG. 22 is a graph showing results for measuring a surface of Wfilm formed on a quartz substrate by TXRF. (Reference)

[0134]FIG. 23 is a graph showing results for measuring a surface of aquartz substrate by TXRF. (Reference)

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0135] Hereinafter, embodiments of the present invention will bedescribed.

Embodiment 1

[0136] Hereinafter, a representative peeling off procedure utilizing thepresent invention will be schematically shown with reference to FIG. 1.

[0137] In FIG. 1A, the reference numeral 10 denotes a substrate, thereference numeral 11 denotes a nitride layer or a metal layer, thereference numeral 12 denotes an oxide layer, and the reference numeral13 denotes a peeled off layer.

[0138] In FIG. 1A, as for the substrate 10, a glass substrate, a quartzsubstrate, a ceramic substrate or the like can be used. Moreover, asilicon substrate, a metal substrate or a stainless substrate may alsobe used.

[0139] First, as shown in FIG. 1A, the nitride layer or metal layer 11is formed on the substrate 10. As the nitride layer or metal layer 11,representative examples are as follows: an element selected from Ti, Al,Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, ora monolayer consisted of alloy materials or compound materials whoseprincipal components are the foregoing elements or a lamination ofthese, or a monolayer consisted of these nitrides, for example, titaniumnitride, tungsten nitride, tantalum nitride, molybdenum or a laminationof these. These may be used. Subsequently, the oxide layer 12 is formedon the nitride layer or metal layer 11. As the oxide layer 12, onerepresentative example may use silicon oxide, oxynitride silicon andmetal oxide materials. As for the oxide layer 12, film formation methodssuch as sputtering method, plasma CVD method, coating method may beused. In the present invention, it is important that the film stress ofthis oxide layer 12 and the film stress of the nitride layer or metallayer 11 are made different from each other. The respective filmthickness is appropriately set in the range from 1 nm to 1000 nm, andthe respective film stress may be adjusted. Moreover, FIG. 1, in orderto contemplate the simplification of the process, one example in whichthe nitride layer or metal layer 11 being in contact with the substrate10 is formed has been shown, but the adhesiveness with the substrate 10may be enhanced by providing an insulating layer or metal layer betweenthe substrate 10 and the nitride layer or metal layer 11.

[0140] Subsequently, a peeled off layer 13 is formed on the oxide layer12 (FIG. 1A). The peeled off layer may be a layer containing a varietyof elements (thin film diode, photoelectric conversion elementcomprising PIN junction of silicon, and silicon resistance element)whose representative is TFT. Moreover, the heat processing in the rangewhere the substrate 10 is endurable can be performed. It should be notedthat in the present invention, even if the film stress of the oxidelayer 12 and the film stress of the nitride layer or metal layer 11 aredifferent, the film peeling or the like does not occur by the heatprocessing in the preparing step of the peeled off layer 13.

[0141] Subsequently, the substrate 10 on which the nitride layer ormetal layer 11 is provided is pulled away by the physical means (FIG.1B). Since the film stress of the oxide layer 12 and the film stress ofthe nitride layer or metal layer 11 are different, these can be pulledaway by a comparatively small force. Moreover, although here, oneexample in which it is supposed that the peeled off layer 13 has asufficient mechanical strength is shown, in the case where themechanical strength of the peeled off layer 13 is not sufficient, it ispreferred that after the supporting body (not shown) for fixing thepeeled off layer 13 was pasted, it is peeled off. In this way, thepeeled off layer 13 formed on the oxide layer 12 can be separated fromthe substrate 10. The state after it was peeled off is shown in FIG. 1C.

[0142] In Experiment, in the case where tungsten film has thickness of10 nm as the metal layer 11, and the silicon oxide film has thickness of200 nm as an oxide layer 12 by a sputtering method, the peeling offcould be confirmed according to a peeling off method of the presentinvention. In the case where tungsten film has thickness of 50 nm as themetal layer 11, and the silicon oxide film has thickness of 100 nm as anoxide layer 12 by a sputtering method, the peeling off could beconfirmed according to a peeling off method of the present invention. Inthe case where tungsten film has thickness of 50 nm as the metal layer11, and the silicon oxide film has thickness of 400 nm as an oxide layer12 by sputtering method, the peeling off could be confirmed according toa peeling off method of the present invention.

[0143] Moreover, after it was peeled off, the peeled off layer 13 pulledaway may be pasted on the transferring body (not shown).

[0144] Moreover, the present invention can be applied to a method ofpreparing a variety of semiconductor devices. Particularly, it can bemade light by using plastic substrate for a transferring body andsupporting body. In the case where a liquid crystal display device isprepared, the supporting body is made as an opposing substrate, thesupporting body may be adhered to the peeled layer by utilizing a sealmember as an adhesive member. In this case, an element provided on theforegoing peeled layer has a pixel electrode, and it is made so that aliquid crystal material is packed between the relevant pixel electrodeand the foregoing opposing substrate. Moreover, the order of theprocesses for the preparation of a liquid crystal display device is notparticularly limited, and an opposing substrate as a supporting body waspasted. After the liquid crystal was implanted, the substrate may bepeeled off and pasted on a plastic substrate as a transferring body, orafter the pixel electrode was formed, the substrate may be peeled off,after the plastic substrate as the first transferring body was pasted,the opposing substrate as the second transferring body may be pasted.

[0145] Moreover, in the case where a light emitting device representedby a light emitting device having an OLED is prepared, it is preferablethat the supporting body is made as a sealing medium, a light emittingelement is completely interrupted from the exterior so as to preventsubstances such as water content, oxygen or the like which promotes thedeterioration of an organic compound layer from penetrating from theexterior.

[0146] Moreover, in the case where a light emitting device representedby a light emitting device having an OLED is prepared, it is preferablethat substances such as water, oxygen or the like promoting thedeterioration of the organic compound layer is sufficiently preventedfrom penetrating from the exterior not only into the supporting body butalso the transferring body.

[0147] Moreover, the order of the processes for the preparation of alight emitting device is not particularly limited.

[0148] After a light emitting element was formed, a plastic substrate asa supporting body may be pasted, the substrate may be peeled off, andthe plastic substrate as a transferring body may be pasted, or after alight emitting element was formed, the substrate may be peeled off, andafter the plastic substrate as the first transferring body was pasted,the plastic substrate as the second transferring body may be pasted.

Embodiment 2

[0149] As for the present Embodiment, the peeling off procedure forpeeling off the substrate while the impurities diffusion from thenitride layer or metal layer and the substrate is prevented by providinga primary coat insulating layer being in contact with the peeled offlayer is schematically shown in FIG. 2.

[0150] In FIG. 2A, the reference numeral 20 denotes a substrate, thereference numeral 21 denotes a nitride layer or a metal layer, thereference numeral 22 denotes an oxide layer, the reference numerals andcharacters 23 a and 23 b denote primary coat insulating layers, and thereference numeral 24 denotes a peeled off layer.

[0151] In FIG. 2A, as for the substrate 20, a glass substrate, a quartzsubstrate, a ceramic substrate or the like can be used. Moreover, asilicon substrate, a metal substrate or a stainless substrate may alsobe used.

[0152] First, as shown in FIG. 2A, the nitride layer or metal layer 21is formed on the substrate 20. As the nitride layer or metal layer 21,representative examples are as follows: an element selected from Ti, Al,Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, ora monolayer consisted of alloy materials or compound materials whoseprincipal components are the foregoing elements or a lamination ofthese, a monolayer consisted of these nitrides, for example, titaniumnitride, tungsten nitride, tantalum nitride, molybdenum nitride or alamination of these. These may be used.

[0153] Subsequently, the oxide layer 22 is formed on the nitride layeror metal layer 21. As the oxide layer 22, one representative example mayuse silicon oxide, oxynitride silicon, and metal oxide materials. Itshould be noted that any film formation method such as a sputteringmethod, a plasma CVD method, coating method or the like might be appliedto the oxide layer 22.

[0154] In the present invention, it is important that the film stress ofthis oxide layer 22 and the film stress of the nitride layer or metallayer 21 are made different. The respective film thickness isappropriately set in the range from 1 nm to 1000 nm, and the respectivefilm stress may be adjusted. Moreover, FIG. 2, in order to contemplatethe simplification of the process, one example in which the nitridelayer or metal layer 21 being in contact with the substrate 20 is formedhas been shown, but the adhesiveness with the substrate 20 may beenhanced by providing an insulating layer or metal layer between thesubstrate 20 and the nitride layer or metal layer 21.

[0155] Subsequently, a primary coat insulating layers 23 a and 23 b wereformed on the oxide layer 22 by plasma CVD method. Here, the siliconoxynitride film 23 a (composition ratio Si=32%, O=27%, N=24% and H=17%)prepared from the raw material gases SiH₄, NH₃, and N₂O was formed(preferably, 10-200 nm) in thickness of 50 nm at 400° C. of the filmformation temperature by a plasma CVD method, and further the siliconoxynitride film 23 b (composition ratio Si=32%, 0=59%, N=7% and H=2%)prepared from the raw material gases SiH₄ and N₂O was lamination-formed(preferably, 50-200 nm) in thickness of 100 nm at 406° C. of the filmformation temperature by a plasma CVD method. But it is not particularlylimited, and a monolayer or a lamination having three layers or more maybe used. Subsequently, a peeled off layer 24 is formed on the primarycoat insulating layer 23 b (FIG. 2A).

[0156] In this way, in the case where two-layer primary coat insulatinglayers 23 a and 23 b were made, in the process in which the peeled offlayer 24 is formed, diffusion of the impurities from the nitride layeror the metal layer 21 and the substrate 20 can be prevented. Moreover,the adhesiveness between the oxide layer 22 and the peeled off 24 can beenhanced by utilizing the primary coat insulating layers 23 a and 23 b.

[0157] Moreover, in the case where the concave and convex are formed onthe surface due to the nitride layer or metal layer 21 and the oxidelayer 22, the surface may be flattened before and after the primary coatinsulating layer is formed. The coverage on the peeled off layer 24becomes more excellent when it is flattened, in the case where thepeeled off layer 24 containing an element 24 is formed, it is preferablesince the element characteristics become easily stable. It should benoted that as a flattening processing, an etch back method in which anetching or the like is performed after the formation of the coated film(resist film or the like), a chemical mechanical polishing method (CMPmethod) or the like may be used.

[0158] Subsequently, the substrate 20 on which the nitride layer ormetal layer 21 is provided is pulled away by the physical means (FIG.2B). Since the film stress of the oxide layer 22 and the film stress ofthe nitride layer or metal layer 21 are different, these can be pulledaway by a comparatively small force. Moreover, although here, oneexample in which it has been supposed that the peeled off layer 24 has asufficient mechanical strength is shown, in the case where themechanical strength of the peeled off layer 24 is not sufficient, it ispreferred that after the supporting body (not shown) for fixing thepeeled off layer 24 was pasted, it is peeled off.

[0159] In this way, the peeled off layer 24 formed on the primary coatinsulating layer 22 can be separated from the substrate 20. The stateafter it was peeled off is shown in FIG. 2C.

[0160] Moreover, after it was peeled off, the peeled off layer 24 pulledaway may be pasted on the transferring body (not shown).

[0161] Moreover, the present invention can be applied to a method ofpreparing a variety of semiconductor devices. Particularly, it can bemade light by using plastic substrate for a transferring body andsupporting body. In the case where a liquid crystal display device isprepared, the supporting body is made as an opposing substrate, thesupporting body may be adhered to the peeled layer by utilizing ansealing medium as an adhesive member. In this case, an element providedon the peeled layer has a pixel electrode, and it is made so that aliquid crystal material is packed between the relevant pixel electrodeand the foregoing opposing substrate. Moreover, the order of theprocesses for the production of a liquid crystal display device is notparticularly limited, an opposing substrate as a supporting body waspasted, after the liquid crystal was implanted, and the substrate may bepeeled off and pasted on a plastic substrate as a transferring body, orafter the pixel electrode was formed, the substrate may be peeled off.After the plastic substrate as the first transferring body was pasted,the opposing substrate as the second transferring body may be pasted.

[0162] Moreover, in the case where a light-emitting device representedby a light emitting device having an OLED is prepared, it is preferablethat the supporting body is made as a sealing medium, a light emittingelement is completely interrupted from the exterior so as to preventsubstances such as water content, oxygen or the like which promotes thedeterioration of an organic compound layer from penetrating from theexterior.

[0163] Moreover, in the case where a light-emitting device representedby a light emitting device having an OLED is prepared, it is preferablethat substances such as water content, oxygen or the like promoting thedeterioration of the organic compound layer is sufficiently preventedfrom penetrating from the exterior not only into the supporting body butalso the transferring body. Moreover, the order of the processes for thepreparation of a light emitting device is not particularly limited,after a light emitting element was formed, a plastic substrate as asupporting body may be pasted, the substrate may be peeled off, and theplastic substrate as a transferring body may be pasted, or after a lightemitting element was formed, the substrate may be peeled off, and afterthe plastic substrate as the first transferring body was pasted, theplastic substrate as the second transferring body may be pasted.

Embodiment 3

[0164] In the present embodiment, in addition to Embodiment 1, anexample in which the irradiation of laser beam or the heat processing isperformed in order to promote the peeling off is shown in FIG. 4.

[0165] In FIG. 4A, the reference numeral 40 denotes a substrate, thereference numeral 41 denotes a nitride layer or a metal layer, thereference numeral 42 denotes an oxide layer and the reference numeral 43denotes a peeled off layer.

[0166] Since the step of forming it until the peeled off layer 43 ismade is the same with Embodiment 1, the description is omitted.

[0167] After the peeled off layer 43 was formed, the irradiation oflaser beam is performed (FIG. 3A). As a laser beam, a gas laser such asan excimer laser or the like, a solid state laser such as YVO₄ laser,YAG laser or the like, and a semiconductor laser may be used. Moreover,the form of laser may be either of continuous oscillation or pulseoscillation, and the shape of the laser beam may be any of linear,rectangular, circular, or elliptical shape. Moreover, the wavelength tobe used maybe any of fundamental wave, the second higher harmonic wave,or the third higher harmonic wave.

[0168] Moreover, it is desirable that a material used for the nitridelayer or metal layer 41 is a material easily absorbing the laser beam,and titanium nitride is preferred. It should be noted that in order tomake the laser beam pass, a substrate having a transparency is used forthe substrate 40.

[0169] Subsequently, the substrate 40 on which the nitride layer ormetal layer 41 is provided is pulled away by the physical means (FIG.4B). Since the film stress of the oxide layer 42 and the film stress ofthe nitride layer or metal layer 41 are different, these can be pulledaway by a comparatively small force.

[0170] The film stresses can be changed each other and the peeling canbe promoted by irradiating the laser beam and heating the interfacebetween the nitride layer or metal layer 41 and the oxide layer 42, andthe peeling off can be performed by smaller force. Moreover, althoughhere, one example in which it is supposed that the peeled off layer 43has a sufficient mechanical strength is shown, in the case where themechanical strength of the peeled off layer 43 is not sufficient, it ispreferred that after the supporting body (not shown) for fixing thepeeled off layer 43 was pasted, it is peeled off. In this way, thepeeled off layer 43 formed on the oxide layer 42 can be separated fromthe substrate 40. The state after it was peeled off is shown in FIG. 4C.

[0171] Moreover, it is not limited to the laser beam, a visible lightfrom the light source such as a halogen lump or the like, an infraredray, an ultraviolet ray, a microwave or the like may be used.

[0172] Moreover, instead of laser beam, the heat processing in anelectric furnace may be available.

[0173] Moreover, before the supporting body is adhered, or before it ispeeled off by the foregoing physical means, the heating processing orthe irradiation of laser beam may be performed.

[0174] Furthermore, the present Embodiment can be combined withEmbodiment 2.

Embodiment 4

[0175] In the present embodiment, in addition to Embodiment 1, anexample in which an oxide in a granular shape is provided on theinterface between the nitride layer or metal layer and the oxide layerin order to promote the peeling off is shown in FIG. 5.

[0176] In FIG. 5A, the reference numeral 50 denotes a substrate, thereference numeral 51 denotes a nitride layer or a metal layer, thereference numeral 52 a denotes an oxide layer in a granular shape, thereference numeral 52 b denotes an oxide layer, and the reference numeral53 denotes a peeled off layer.

[0177] Since the step of forming it until the nitride layer or metallayer 51 is formed is the same with Embodiment 1, the description isomitted.

[0178] After the nitride layer or metal layer 51 was formed, the oxidein a granular shape 52 a is formed. As the oxide in a granular shape 52a, a metal oxide material, form example, ITO (indium oxide-tin oxidealloy), indium oxide-zinc oxide alloy (In₂O₃—ZnO), zinc oxide (ZnO) orthe like may be used.

[0179] Subsequently, the oxide layer 52 b for covering the oxide layer52 a in a granular shape is formed. As the oxide layer 52 b, onerepresentative example may use silicon oxide, oxynitride silicon, andmetal oxide materials. It should be noted that any film formation methodsuch as a sputtering method, a plasma CVD method, coating method or thelike might be applied to the oxide layer 23 b.

[0180] Subsequently, a peeled off layer 53 is formed on the oxide layer52 b (FIG. 5A).

[0181] Subsequently, the substrate 50 on which the nitride layer ormetal layer 51 is provided is pulled away by the physical means (FIG.5B). Since the film stress of the oxide layer 52 and the film stress ofthe nitride layer or metal layer 51 are different, these can be pulledaway by a comparatively small force.

[0182] The bonding force between the nitride layer or metal layer 51 andthe oxide layer 52 is weakened, the adhesiveness from each other ischanged, the peeling off can be promoted by providing the oxide in agranular shape 52 b and these can be peeled off by smaller force.Moreover, although here, an example in which it is supposed that thepeeled off layer 53 has a sufficient mechanical strength is shown, inthe case where the mechanical strength of the peeled off layer 53 is notsufficient, it is preferred that after the supporting body (not shown)for fixing the peeled off layer 53 was pasted, it is peeled off.

[0183] In this way, the peeled off layer 53 formed on the oxide layer 52b can be separated from the substrate 50. The state after it was peeledoff is shown in FIG. 5C.

[0184] Furthermore, the present Embodiment can be combined withEmbodiment 2 or Embodiment 3.

[0185] The present invention comprising the above-describedconstitutions will be described in detail with reference to Examplesshown below.

EXAMPLES Example 1

[0186] Examples of the present invention will be described withreference to FIG. 6 through FIG. 8. Here, a method in which a pixelsection and TFT of a drive circuit provided on the periphery of thepixel section (n-channel type TFT and p-channel type TFT) are preparedat the same time on the same substrate will be described in detail.

[0187] First, the nitride layer or metal layer 101, the oxide layer 102and the primary coat insulating film 103 are formed on the substrate100, after a semiconductor film having a crystal structure was obtained,a semiconductor layers 104-108 isolated in a island shape are formed byetching processing in the desired shape.

[0188] As the substrate 100, the glass substrate (#1737) is used.

[0189] Moreover, as the metal layer 101, an element selected from Ti,Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir andPt, or a monolayer consisted of alloy materials or compound materialswhose principal components are the foregoing elements or a lamination ofthese may be used. More preferably, a monolayer consisted of thesenitrides, for example, titanium nitride, tungsten nitride, tantalumnitride, molybdenum nitride or a lamination of these may be used. Here,titanium nitride film having film thickness of 100 nm is utilized by asputtering method.

[0190] Moreover, as the oxide layer 102, a monolayer consisted of asilicon oxide material or a metal oxide material, or a lamination ofthese may be used. Here, a silicon oxide film having film thickness of200 nm is used by a sputtering method. The bonding force between themetal layer 101 and the oxide layer 102 is strong in heat processing,the film peeling (also referred to as solely “peeling”) or the like doesnot occur. However, it can be easily peeled off on the inside of theoxide layer or on the interface by the physical means.

[0191] Subsequently, as a primary coat insulating layer, a siliconoxynitride film 103 a (composition ratio Si=32%, O=27%, N=24% and H=17%)prepared from the raw material gases SiH₄, NH₃, and N₂O was formed(preferably, 10-200 nm) in thickness of 50 nm at 400° C. of the filmformation temperature by a plasma CVD method. Subsequently, after thesurface was washed by ozone water, the oxide film of the surface wasremoved by dilute hydrofluoric acid (1:100 dilution). Subsequently, asilicon oxynitride film 103 b (composition ratio Si=32%, O=59%, N=7% andH=2%) prepared from the raw material gases SiH₄ and N₂O waslamination-formed (preferably, 50-200 nm) in thickness of 100 nm at 400°C. of the film formation temperature by a plasma CVD method, andfurther, a semiconductor layer (here, an amorphous silicon layer) havingan amorphous structure was formed (preferably, 25-80 nm) in thickness of54 nm at 300° C. of the film formation temperature without the airrelease by a plasma CVD method.

[0192] In the present Example, although the primary coat film 103 isshown as a two-layer structure, a monolayer film of the foregoinginsulating film or a layer as a structure in which two layers or moreare laminated may be formed.

[0193] Moreover, there are no limitations to materials for asemiconductor film, but preferably, it may be formed using a silicon ora silicon germanium (Si_(x)Ge_(1-x) (X=0.0001-0.02)) alloy or the likeby the known means (sputtering method, LPCVD method, plasma CVD methodor the like). Moreover, a plasma CVD apparatus may be sheet typeapparatus, or batch type apparatus. Moreover, the primary insulatingfilm and the semiconductor film may be continuously formed in the samefilm formation chamber without contacting with the air.

[0194] Subsequently, after the surface of the semiconductor film havingan amorphous structure was washed, an oxide film having an extremelythin thickness of about 2 nm is formed on the surface with ozone water.Subsequently, in order to control the threshold value of TFT, a dopingof a trace of impurity element (boron or phosphorus) is performed. Here,boron was added to the amorphous silicon film under the dopingconditions of 15 kV of acceleration voltage, 30 sccm of flow rate of thegas in which diborane was diluted into 1% with hydrogen, 2×10¹²/cm² ofdosage without mass segregating diborane (B₂H₆) by utilizing an iondoping method in which plasma excitation was performed.

[0195] Subsequently, nickel acetate solution containing 10 ppm of nickelwhen it is converted to weight was coated by a spinner. A method ofspreading over the entire surface with nickel element by a sputteringmethod instead of coating may be employed.

[0196] Subsequently, a semiconductor film having a crystal structure wasformed by performing the heat processing and crystallizing it. For thisheat processing, the heat processing of an electric furnace or theirradiation of strong light may be used. In the case where it isperformed by utilizing the heat processing of the electric furnace, itmay be performed at 500° C.-650° C. for 4-24 hours. Here, after the heatprocessing (500° C., one hour) for dehydrogenation was carried out, asilicon film having a crystal structure was obtained by performing theheat processing for crystallization (550° C., 4 hours). It should benoted that although here, crystallization was performed using the heatprocessing by the furnace, however, the crystallization may be performedby a lamp anneal apparatus.

[0197] It should be noted that here, a crystallization technology usingnickel as a metal element for promoting the crystallization of siliconis used. However, the other known crystallization technology, forexample, solid phase crystallization method or laser crystallizationmethod may be used.

[0198] Subsequently, after the oxide film of the surface of the siliconfilm having a crystal structure was removed by dilute hydrofluoric acidor the like, the irradiation of the first laser beam (XeCl: wavelength308 nm) for enhancing the crystallization ratio and repairing thedefaults remained within the crystal grain is performed in the air, orin the oxygen atmosphere. For a laser beam, an excimer laser beam of 400nm or less of wavelength, the second higher harmonic wave, the thirdhigher harmonic wave of YAG laser are used. Anyhow, using pulse laserbeam having about 10-1000 Hz of repeated frequency, the relevant laserbeam is condensed at 100-500 mJ/cm² by an optical system, irradiatedwith overlap ratio of 90-95% and it may be made it scan the surface ofthe silicon film. Here, the irradiation of the first laser beam isperformed at repeated frequency of 30 Hz, 393 mJ/cm² of energy densityin the air. It should be noted that since it is performed in the air, orin the oxygen atmosphere, an oxide film is formed on the surface by theirradiation of the first laser beam.

[0199] Subsequently, after the oxide film formed by irradiation of thefirst laser beam was removed by dilute hydrofluoric acid, theirradiation of the second laser beam is performed in the nitrogenatmosphere or in the vacuum, thereby flattening the surface of thesemiconductor film. For this laser beam (second laser beam), an excimerlaser beam having a wavelength of 400 nm or less, the second higherharmonic wave, the third higher harmonic wave of YAG laser are used. Theenergy density of the second laser beam is made larger than the energydensity of the first laser beam, preferably, made larger by 30-60mJ/cm². Here, the irradiation of the second laser beam is performed at30 Hz of the repeated frequency and 453 mJ/cm² of energy density, P−Vvalue (Peak to Valley, difference between the maximum value and minimumvalue) of the concave and convex in the surface of the semiconductorfilm is to be 50 nm or less. This P−V value is obtained by an AFM(atomic force microscope).

[0200] Moreover, in the present Example, the irradiation of the secondlaser beam was performed on the entire surface. However, since thereduction of the OFF-state current is particularly effective to the TFTof the pixel section, it may be made a step of selectively irradiatingonly on at least pixel section.

[0201] Subsequently, a barrier layer consisted of an oxide film of total1-5 nm in thickness is formed by processing the surface with ozone waterfor 120 seconds.

[0202] Subsequently, an amorphous silicon film containing argon elementwhich is to be gettering site is formed in film thickness of 150 nm onthe barrier layer by a sputtering method. The film formation conditionsby a sputtering method of the present Example are made as 0.3 Pa of filmformation pressure, 50 (sccm) of gas (Ar) volumetric flow rate, 3 kW offilm formation power, and 150° C. of the substrate temperature. Itshould be noted that the atomic percentage of argon element contained inthe amorphous silicon film under the above-described conditions is inthe range from 3×10²⁰/cm³ to 6×10²⁰/cm³, the atomic percentage of oxygenis in the range from 1×10¹⁹/cm³ to 3×10⁹/cm³. Then, the gettering isperformed by carrying out the heat processing at 650° C. for 3 minutesusing a lamp anneal apparatus.

[0203] Subsequently, after the barrier layer is made an etching stopper,the amorphous silicon film containing argon element which is thegettering site was selectively removed, the barrier layer is selectivelyremoved with dilute hydrofluoric acid. It should be noted that sincewhen gettering, nickel tends to easily move into the higher oxygendensity region, it is desirable that the barrier layer consisted of anoxide film is removed after the gettering.

[0204] Subsequently, after a thin oxide film is formed with the ozonewater on the surface of the silicon film (also referred to as“polysilicon film”) having the obtained crystal structure, a maskconsisted of a resist is formed, and the semiconductor layers 104-108isolated in an island shape is formed in the desired shape by etchingprocessing. After the semiconductor layer was formed, the mask consistedof the resist is removed.

[0205] Subsequently, the oxide film was removed by an etchant containinghydrofluoric acid, and at the same time, the surface of the silicon filmwas washed, an insulating film whose principal component is silicon andwhich is to be a gate insulating film 109 is formed. In the presentExample, a silicon oxynitride film (composition ratio Si=32%, O=59%,N=7% and H=2%) is formed in thickness of 115 nm by plasma CVD method.

[0206] Subsequently, as shown in FIG. 6A, the first electricallyconductive film 110 a having film thickness of 20-100 nm and the secondelectrically conductive film 110 b having film thickness of 100-400 nmare lamination-formed on the gate insulating film 109. In the presentExample, a tantalum nitride film having film thickness of 50 nm and atungsten film having film thickness of 370 nm are in turn laminated onthe gate insulating film 109.

[0207] As an electrically conductive material for forming the firstelectrically conductive film and the second electrically conductivefilm, it is formed using an element selected from Ta, W, Ti, Mo, Al andCu, or alloy material or compound material whose principal component isthe foregoing element. Moreover, as the first electrically conductivefilm and the second electrically conductive film, a semiconductor filmrepresented by a polycrystal silicon film in which impurity element suchas phosphorus or the like is doped, and Ag, Pd, Cu alloys may be used.Moreover, it is not limited to a two-layer structure. For example, itmay be made a three-layer structure in which a tungsten film having filmthickness of 50 nm, aluminum-silicon (Al—Si) alloy having film thicknessof 500 nm, and a titanium nitride film having film thickness of 30 nmare in turn laminated.

[0208] Moreover, in the case of a three-layer structure, instead oftungsten of the first electrically conductive film, tungsten nitride maybe used, instead of aluminum-silicon (Al—Si) alloy of the secondelectrically conductive film, aluminum-titanium (Al—Ti) alloy film maybe used, or instead of a titanium nitride film of the third electricallyconductive film, a titanium film may be used. Moreover, it may be amonolayer structure.

[0209] Next, as shown in FIG. 6B, masks 112-117 consisted of resists areformed by light exposure step, the first etching processing for forminga gate electrode and wirings is performed. The first etching processingis performed under the first and second etching conditions. As for anetching, ICP (Inductively Coupled Plasma) etching method may be used.The film can be etched in the desired tapered shape by appropriatelyadjusting the etching conditions (electric energy applied to the coiltype electrode, electric energy applied to the electrode on thesubstrate side, temperature of electrode on the substrate side and thelike). It should be noted that as gas for an etching, chlorine based gaswhich is represented by Cl₂, BCl₃, SiCl₄, CCl₄ or the like, fluorinebased gas which is represented by CF₄, SF₆, NF₃ or the like or O₂ can beappropriately used.

[0210] In the present Example, also to the substrate side (samplestage), 150 W of RF (13.56 MHz) electric power is turned on,substantially negative self-bias voltage is applied. It should be notedthat the size of the electrode area on the side of the substrate is 12.5cm×12.5 cm, and the size of the coil type electrode area (here, quartzdisk on which the coil is provided) is an area of a disk having adiameter of 25 cm. The end section of the first electrically conductivelayer is made in a tapered shape by etching W film under the firstetching conditions. The etching rate to W under the first etchingconditions is 200.39 nm/min, the etching rate to TaN is 80.32 nm/min,and the selection ratio of W to TaN is about 2.5. Moreover, the taperedangle of W is about 26°. Then, the second etching conditions werechanged without removing the masks 112-117 consisted of resists, CF₄ andCl₂ were used for etching gas, the respective ratio of gas volumetricflow rate was made 30/30 (sccm), 500 W of RF (13.56 MHz) electric powerwas turned on to the coil type electrode at 1 Pa of the pressure, theplasma was generated and the etching was performed for about 30 seconds.20 W of RF (13.56 MHz) electric power was also turned on to the side ofthe electrode (sample stage), and substantially a negative self biasvoltage was applied. The etching rate to W under the second etchingconditions was 58.97 nm/min, and the etching rate to TaN was 66.43nm/min. It should be noted that in order to etch without remainingresidue on the gate insulating film, it might increase the etching timeat the ratio of about 10-20%. In the above-described first etchingprocessing, the end section of the first electrically conductive layerand the second electrically conductive layer becomes in a tapered shapedue to the effect of the bias voltage to be applied to the substrateside by making the mask consisted of a resist adjust to be suitable. Theangle of this tapered section may be made in the range from 15 to 45°.

[0211] In this way, electrically conductive layers 119-123 in the firstshape consisted of the first electrically conductive layer and thesecond electrically conductive layer (first electrically conductivelayers 119 a-124 a and the second electrically conductive layers 119b-124 b) are formed by the first etching processing. The insulating film109 which is to be a gate insulating film is etched about 10-20 nm,becomes a gate insulating film 118 whose region not covered with theelectrically conductive layers in the first shape 119-123 is madethinner.

[0212] Subsequently, the second etching processing is performed withoutremoving the mask consisted of the resist. Here, using SF₆, Cl₂ and O₂for etching gas, the etching was performed for 25 seconds by making theratio of gas volumetric flow rate 24/12/24 (sccm), turning on 700 W ofRF (13.56 MHz) electric power to the coil type electrode and generatingthe plasma at 1.3 Pa of the pressure. 10 W of RF (13.56 MHz) electricpower was also turned on to the side of the electrode (sample stage),and substantially a negative self bias voltage was applied. The etchingrate to W under the second etching conditions was 227.3 nm/min, and theetching rate to TaN was 32.1 nm/min, the selection ratio of W to TaN is7.1, the etching rate to SiON which is an insulating film 118 is 33.7nm/min, and the selection ratio of W to SiON is 6.83. In this way, inthe case where SF₆ is used for etching gas, since the selection ratio tothe insulating film 118 is high, the film reduction can be suppressed.In the present Example, in the insulating film 118, only about 8 nm ofthe film reduction occurred.

[0213] The tapered angle became 70° by the second etching processing.The second electrically conductive layers 126 b-131 b are formed by thesecond etching processing. On the other hand, the first electricallyconductive layer is scarcely etched, and becomes the first electricallyconductive layers 126 a-131 a. It should be noted that the sizes of thefirst electrically conductive layers 126 a-131 a are almost the samewith the first electrically conductive layers 119 a-124 a. Actually,although there are some cases where the width of the first electricallyconductive layer is backward by about 0.3 μm comparing to that beforethe second etching, that is, about 0.6 μm in whole line width backward,there is scarcely no change in size.

[0214] Moreover, in the case where instead of two-layer structure,three-structure in which a tungsten film having film thickness of 50 nm,an aluminum-silicon (Al—Si) alloy film having film thickness of 500 nm,and a titanium nitride film are in turn laminated is employed, as forthe first etching conditions of the first etching processing, theetching may be performed for 117 seconds by utilizing BCl₃, Cl₂ and O₂as raw material gases, making the respective ratio of gas volumetricflow rates 65/10/5 (sccm), turning on 300 W of RF (13.56 MHz) electricpower to the substrate side (sample stage), turning on 450 W of RF(13.56 MHz) electric power to the coil type electrode at 1.2 Pa of thepressure and generating plasma, as for the second etching conditions ofthe first etching processing, the etching may be performed for about 30seconds by utilizing CF₄, Cl₂ and O₂ as raw material gases, making therespective ratio of gas volumetric flow rates 25/25/10 (sccm), turningon 20 W of RF (13.56 MHz) electric power to the substrate side (samplestage), turning on 500 W of RF (13.56 MHz) electric power to the coiltype electrode at 1 Pa of the pressure and generating a plasma, as forthe second etching processing, the etching may be performed by utilizingBCl₃ and Cl₂ as raw material gases, making the respective ratio of gasvolumetric flow rates 20/60 (sccm), turning on 100 W of RF (13.56 MHz)electric power to the substrate side (sample stage), turning on 600 W ofRF (13.56 MHz) electric power to the coil type electrode at 1.2 Pa ofthe pressure and generating a plasma.

[0215] Subsequently, after the mask consisted of the resist was removed,the state of FIG. 6D is obtained by performing the first dopingprocessing. The doping processing may be carried out by an ion dopingmethod, or ion implantation method. The conditions of an ion dopingmethod are 1.5×10¹⁴ atoms/cm², and 60-100 keV of the accelerationvoltage, it is performed under these conditions. As an impurity elementconferring n-type, typically, phosphorus (P) or arsenic (As) are used.In this case, the first electrically conductive layers and the secondelectrically conductive layers 126-130 are masks with respect to theimpurity element conferring n-type, the first impurity regions 132-136are formed in a self-aligned manner. The impurity elements conferringn-type are added in the density range from 1×10¹⁶ to 1×10¹⁷/cm³ to thefirst impurity regions 132-136. Here, the region having the same densityrange with the first impurity region is also referred to as n−-region.

[0216] It should be noted that in the present Example, after the maskconsisted of resist was removed, the first doping processing wasperformed. However, the first doping processing may be performed withoutremoving the mask consisted of the resist.

[0217] Subsequently, as shown in FIG. 7A, the masks 137-139 consisted ofresists are formed and the second doping processing is performed. Themask 137 is a mask for protecting the channel formation region of thesemiconductor layer forming p-channel type TFT of the drive circuit andits peripheral region, the mask 138 is a mask for protecting the channelformation region of the semiconductor layer forming one of n-channeltype TFT of the drive circuit, and the mask 139 is a mask for protectingthe channel formation region of the semiconductor layer forming TFT ofthe pixel section and its peripheral region, and further a region whichis to be retention volume.

[0218] The conditions for ion doping in the second doping processing are1.5×10¹⁵ atoms/cm² of dosage, and 60-100 keV of the accelerationvoltage, and under these conditions, phosphorus (P) is doped. Here, byutilizing the second electrically conductive layers 126 b-128 b asmasks, the impurity region is formed in a self-aligned manner on therespective semiconductor layers. Needless to say, to the region coveredwith the masks 137-139, the impurities are not added. Thus, the secondimpurity regions 140-142 and the third impurity region 144 are formed.The impurity element conferring n-type is added in the density rangefrom 1×10²⁰ to 1-×10²¹/cm³ on the second impurity regions 140-142. Here,the region having the same density range with the second impurity regionis also referred to as n+ region.

[0219] Moreover, the third impurity region is formed in a lower densitythan that of the second impurity region by the first electricallyconductive layer, the impurity element conferring n-type is added in thedensity range from 1×10¹⁸ to 1×10¹⁹/cm³. It should be noted that as forthe third impurity region, since the doping is performed by making itpass the portion of the first electrically conductive layer andperforming the doping, it has a density gradient in which the impuritydensity increases toward the end section of the tapered section. Here,the region having the same density range with the third impurity regionis also referred to as n-region. Moreover, the impurity element is notadded to the region covered by the masks 138 and 139 by the seconddoping processing, therefore, these become the first impurity regions145 and 146.

[0220] Subsequently, after the masks 137-139 consisted of the resistswere removed, the masks 148-150 consisted of resists are newly formed,and as shown in FIG. 7B, the third doping processing is performed.

[0221] In the drive circuit, the fourth impurity regions 151, 152 andthe fifth impurity regions 153, 154 in which the impurity elementconferring p-type electrically conductive type to the semiconductorlayer for forming p-channel type TFT and the semiconductor layer forforming retention volume has been added are formed by theabove-described third doping processing.

[0222] Moreover, it is made so that the impurity element conferringp-type is added to the fourth impurity regions 151,152 in the range from1×10²⁰ to 1×10²¹/cm³. It should be noted that the fourth impurityregions 151,152 are the regions (n−-region) to which phosphorus (P) hasbeen added in the prior step, but its 1.5- to 3-fold density of impurityelement conferring p-type is added, and the electrically conductive typeis p-type. Here, the region having the same density region with thefourth impurity region is also referred to as p+ region.

[0223] Moreover, the fifth impurity regions 153, 154 are formed on theregion overlapped with the tapered section of the second electricallyconductive layer 127 a, it is made so that the impurity elementconferring p-type is added in the density range from 1×10¹⁸ to1×10²⁰/cm³. Here, the region having the same density range with thefifth impurity region is also referred to as p-region.

[0224] Up to the above-described steps, the impurity regions havingn-type or p-type electrically conductive type are formed on therespective semiconductor layers. The electrically conductive layers126-129 become gate electrodes of TFT. Moreover, the electricallyconductive layer 130 becomes one of the electrodes for forming theretention volume in the pixel section. Furthermore, the electricallyconductive layer 131 forms source wirings in the pixel section.

[0225] Subsequently, an insulating film (not shown) for covering thenearly whole surface is formed. In the present Example, a silicon oxidefilm having film thickness of 50 nm has been formed by plasma CVDmethod. Needless to say, this insulating film is not limited to thesilicon oxide film, another insulating film containing silicon may beused as a monolayer or a lamination structure.

[0226] Subsequently, the step for processing the activation of theimpurity elements added to the respective semiconductor layers iscarried out. This activation step is performed by rapid thermalannealing method (RTA method) using a lamp light source, or a method ofirradiating YAG laser or excimer laser from the back side, or heatprocessing using a furnace, or a method combined with any method ofthese methods.

[0227] Moreover, in the present Example, although an example in which aninsulating film was formed before the above-described activation hasbeen shown, the step may be made a step in which after theabove-described activation was performed, the insulating film is formed.Subsequently, the first interlayer insulating film 155 consisted of asilicon nitride film is formed, the heat processing (heat processing at300-550° C. for 1-12 hours) is performed, and the step in which asemiconductor layer is hydrogenated (FIG. 7C). This step is a step inwhich the dangling bond of the semiconductor layer is terminated byhydrogen contained in first interlayer insulating film 155. Thesemiconductor layer can be hydrogenated regardless of the existence ofthe insulating film (not shown) consisted of a silicon oxide film.However, since in the present Example, the materials whose principalcomponent is aluminum are used for the second electrically conductivelayer, it is important that the heat processing conditions are made sothat the second electrically conductive layer is endurable in the stepof hydrogenation. As the other means for hydrogenation, plasmahydrogenation (hydrogen excited by plasma is used) may be performed.

[0228] Subsequently, the second interlayer insulating film 156 consistedof organic insulating material is formed on the first interlayerinsulating film 155. In the present Example, an acryl resin film havingfilm thickness of 1.6 μm is formed. Subsequently, a contact holereaching the source wiring 131, a contact hole reaching the electricallyconductive layers 129, 130 and a contact hole reaching the respectiveimpurity regions are formed. In the present Example, several etchingprocesses are in turn performed. In the present Example, after thesecond interlayer insulating film was etched by utilizing the firstinterlayer insulating film as an etching stopper, the insulating film(not shown) was etched following the first interlayer insulating filmwas etched by utilizing the insulating film (not shown). Then, thewirings and pixel electrodes are formed using Al, Ti, Mo, W and thelike. It is preferable that as for these materials for electrode andpixel electrode, a film whose principal component is Al or Ag, or amaterial excellent in reflecting properties such as a lamination ofthese or the like is used. Thus, source electrodes or drain electrodes157-162, a gate wiring 164, a connecting wiring 163, and a pixelelectrode 165 are formed.

[0229] As described above, a drive circuit 206 having a n-channel typeTFT 201, a p-type channel type TFT 202 and a n-type channel type TFT203, and a pixel section 207 having a pixel TFT 204 consisted of an-channel type TFT and a retention volume 205 can be formed on the samesubstrate (FIG. 8). In the present specification, such a substrate isreferred to as active matrix substrate for the sake of convenience.

[0230] On the pixel section 207, the pixel TFT 204 (n-channel type TFT)has a channel formation region 169, the first impurity region(n−-region) 147 formed outside of the electrically conductive layer 129forming a gate electrode, and the second impurity regions (n+ region)142, 171 functioning as a source region or drain region. Moreover, thefourth impurity region 152, the fifth impurity region 154 are formed onthe semiconductor layer functioning as one of the electrode of theretention volume 205. The retention volume 205 is formed with the secondelectrode 130 and the semiconductor layers 152, 154 and 170 by utilizingthe insulating film (same film with gate insulating film) as adielectric.

[0231] Moreover, in the drive circuit 206, the n-channel type TFT 201(first n-channel type TFT) has a channel formation region 166, the thirdimpurity region (n-region) 144 overlapped with one portion of theelectrically conductive layer 126 which forms a gate electrode via aninsulating film, and the second impurity region (n+ region) 140functioning as a source region or drain region.

[0232] Moreover, in the drive circuit 206, the p-channel type TFT 202has a channel formation region 167, the fifth impurity region (p-region)153 overlapped with one portion of the electrically conductive layer 127which forms a gate electrode via an insulating film, and the fourthimpurity region (p+ region) 151 functioning as a source region or drainregion.

[0233] Moreover, in the drive circuit 206, the n-channel type TFT 203(second n-channel type TFT) has a channel formation region 168, thefirst impurity region (n−-region) 146 outside of the electricallyconductive layer 128 which forms a gate electrode, and the secondimpurity region (n+region) 141 functioning as a source region or drainregion.

[0234] A shift register circuit, a buffer circuit, a level shiftercircuit, a latch circuit and the like are formed by appropriatelycombining these TFTs 201-203, and the drive circuit 206 may be formed.For example, a CMOS circuit may be formed by complementarily connectingthe n-channel type TFT 201 and a p-channel type TFT 202. Particularly,for a buffer circuit whose drive voltage is high, for the purpose ofpreventing the deterioration due to the hot carrier effect, thestructure of a n-channel type TFT 203 is suitable.

[0235] Moreover, for a circuit that the reliability is considered as thetop priority, the structure of a n-channel type TFT 201 which is a GOLDstructure is suitable.

[0236] Moreover, since the reliability can be enhanced by enhancing theflattening of the surface of a semiconductor film, in a TFT having aGOLD structure, a sufficient reliability can be obtained also bydiminishing the area of the impurity region overlapping with a gateelectrode via a gate insulating film. Concretely, in a TFT having a GOLDstructure, a sufficient reliability can be obtained by diminishing thesize of the portion which is a tapered section of a gate electrode.Moreover, in a TFT having a GOLD structure, when the gate insulatingfilm is thinner, the parasitic capacitance increases. However, the sizeof the portion which is a tapered section of the gate electrode (firstelectrically conductive layer) is made smaller, and the parasiticcapacitance is reduced, f characteristic (frequency characteristic) isalso enhanced and further a high operation is possible and the TFTobtained a sufficient reliability.

[0237] It should be noted that also in the pixel TFT of the pixelsection 207, the reduction of OFF-state current and the reduction of thevariation are realized by irradiation of the second laser beam.

[0238] Moreover, in the present Example, an example in which an activematrix substrate for forming a reflective type display device isprepared is shown, but when the pixel electrode is formed by atransparent electrically conductive film, although the number ofphoto-masks increases by one sheet, a transparent type display devicecan be formed.

[0239] Moreover, in the present Example, a glass substrate was used, butit is not particularly limited. A quartz substrate, a semiconductorsubstrate, a ceramic substrate, and a metal substrate can be used.

[0240] Moreover, after the state of FIG. 8 was obtained, if the layer(peeled off layer) containing a TFT provided on the oxide layer 102 hasa sufficient mechanical strength, the substrate 100 may be pulled away.In the present Example, since the mechanical strength of the peeled-offlayer is not sufficient, it is preferred that after the supporting body(not shown) for fixing the peeled-off layer was pasted, it is peeledoff.

Example 2

[0241] In the present Example, the step in which an active matrix typeliquid crystal display device is prepared by peeling off the substrate100 from the active matrix substrate prepared in Example 1 and pastingit with a plastic substrate will be described below. FIG. 9 is used forthe purpose of describing it.

[0242] In FIG. 9A, the reference numeral 400 denotes a substrate, thereference numeral 401 denotes a nitride layer or metal layer, thereference numeral 402 denotes an oxide layer, the reference numeral 403denotes a primary coat insulating layer, the reference numeral 404 adenotes an element of a drive circuit 413, the reference numeral 404 bdenotes an element 404 b of the pixel section 414 and the referencenumeral 405 denotes a pixel electrode. Here, the term “element” isreferred to a semiconductor element (typically, TFT) or MIM element orthe like used for a switching element of pixels in an active matrix typeliquid crystal display device. An active matrix substrate shown in FIG.9A is shown as simplifying the active matrix substrate shown in FIG. 8,the substrate 100 in FIG. 8 corresponds to the substrate 400 in FIG. 9A.Similarly, the reference numeral 401 in FIG. 9A corresponds to thereference numeral 101 in FIG. 8, the reference numeral 402 in FIG. 9Acorresponds to the reference numeral 102 in FIG. 8, the referencenumeral 403 in FIG. 9A corresponds to the reference numeral 103 in FIG.8, the reference numeral 404 a in FIG. 9A corresponds to the referencenumerals 201 and 202 in FIG. 8, the reference numeral 404 b in FIG. 9Acorresponds to the reference numeral 204 in FIG. 8, and the referencenumeral 405 in FIG. 9A corresponds to the reference numeral 165 in FIG.8, respectively.

[0243] First, according to Example 1, after the active matrix substrateof the state in FIG. 8 was obtained, an orientation film 406 a is formedon the active matrix substrate of FIG. 8, and a rubbing processing isperformed. It should be noted that in the present Example, before theorientation film is formed, a spacer in a column shape (not shown) forretaining a substrate interval was formed at the desired position bypatterning an organic resin film such as an acryl resin or the like.Moreover, instead of a spacer in a column shape, a spacer in a sphereshape may be scattered over the whole surface of the substrate.

[0244] Subsequently, an opposing substrate which is to be a supportingbody 407 is prepared for. A color filter (not shown) in which a coloredlayer and a radiation shield layer were arranged corresponding to therespective pixels has been provided on this opposing substrate.Moreover, a radiation shield was provided on the portion of the drivecircuit. A flattening film (not shown) for covering this color filterand the radiation shield layer was provided. Subsequently, an opposingelectrode 408 consisted of a transparent electrically conductive filmwas formed on the flattening film in the pixel section, an orientationfilm 406 b was formed on the whole surface of the opposing substrate,and the rubbing processing was provided.

[0245] Then, an active matrix substrate 400 in which the pixel sectionand the drive circuit were formed and the supporting body 407 are pastedtogether with a sealing medium which is to be an adhesive layer 409.Into a sealing medium, filler is mixed, two sheets of substrates arepasted together with uniform interval by this filler and a spacer in acolumn shape. Then, between both substrates, a liquid crystal material410 is implanted and completely sealed with a sealing compound (notshown) (FIG. 9B). As a liquid crystal material 410, the known liquidcrystal material may be used.

[0246] Subsequently, the substrate 400 on which the nitride layer ormetal layer 401 has been provided is pulled away by the physical means(FIG. 9C). Since the film stress of the oxide layer 402 and the filmstress of the nitride layer or metal layer 401 are different, these canbe pulled away by comparatively small force.

[0247] Subsequently, it is pasted with an adhesive layer 411 consistedof an epoxy resin or the like on a transferring body 412. In the presentExample, it can be made light by using plastic film substrate for thetransferring body 412.

[0248] In this way, a flexible active matrix type liquid crystal displaydevice is completed. Then, if necessary, the flexible substrate 412 oran opposing substrate is cut down in the desired shape. Furthermore, apolarizing plate (not shown) or the like was appropriately providedusing the known technology. Then, a FPC (not shown) was pasted using theknown technology.

Example 3

[0249] In the Example 2, an example in which after an opposing substrateas a supporting body was pasted and a liquid crystal was implanted, thesubstrate was peeled off and a plastic substrate was pasted as atransferring body was shown. However, in the present Example, an examplein which after an active matrix substrate shown in FIG. 8 was formed,the substrate was peeled off, and the plastic substrate as the firsttransferring body and the plastic substrate as the second transferringbody was pasted together will be described. FIG. 10 will be used for thepurpose of describing it.

[0250] In FIG. 10A, the reference numeral 500 denotes a substrate, thereference numeral 501 denotes a nitride layer or metal layer, thereference numeral 502 denotes an oxide layer, the reference numeral 503denotes a primary coat insulating layer, the reference numeral 504 adenotes an element of a drive circuit 514, the reference numeral 504 bdenotes an element {504 b?} of the pixel section 515 and the referencenumeral 505 denotes a pixel electrode. An active matrix substrate shownin FIG. 10 A is shown as one simplifying the active matrix substrateshown in FIG. 8, the substrate 100 in FIG. 8 corresponds to thesubstrate 500 in FIG. 10A. Similarly, the reference numeral 501 in FIG.10A corresponds to the reference numeral 101 in FIG. 8, the referencenumeral 502 in FIG. 10A corresponds to the reference numeral 102 in FIG.8, the reference numeral 503 in FIG. 10A corresponds to the referencenumeral 103 in FIG. 8, the reference numeral 504 a in FIG. 10Acorresponds to the reference numerals 201 and 202 in FIG. 8, thereference numeral 504 b in FIG. 10A corresponds to the reference numeral204 in FIG. 8, and the reference numeral 505 in FIG. 10A corresponds tothe reference numeral 165 in FIG. 8, respectively.

[0251] First, according to Example 1, after an active matrix substratein the state of FIG. 8 was obtained, the substrate 500 on which thenitride layer or metal layer 501 has been provided is pulled away by thephysical means (FIG. 10B). Since the film stress of the oxide layer 502and the film stress of the nitride layer or metal layer 501 aredifferent, these can be pulled away by a comparatively small force.

[0252] Subsequently, it is pasted with an adhesive layer 506 consistedof an epoxy resin or the like on a transferring body 507 (firsttransferring body). In the present Example, it can be made light byusing plastic film substrate for the transferring body 507 (FIG. 10C).Subsequently, an orientation film 508 a is formed and a rubbingprocessing is performed. It should be noted that in the present Example,before the orientation film is formed, a spacer in a column shape (notshown) for retaining a substrate interval was formed at the desiredposition by patterning an organic resin film such as an acryl resin orthe like. Moreover, instead of a spacer in a column shape, a spacer in asphere shape may be scattered over the whole surface of the substrate.

[0253] Subsequently, an opposing substrate which is to be a supportingbody 510 (second transferring body) is prepared for. A color filter (notshown) in which a colored layer and a radiation shield layer werearranged corresponding to the respective pixels has been provided onthis opposing substrate. Moreover, a radiation shield was provided onthe portion of the drive circuit. A flattening film (not shown) forcovering this color filter and the radiation shield layer was provided.

[0254] Subsequently, an opposing electrode 509 consisted of atransparent electrically conductive film was formed on the flatteningfilm in the pixel section, an orientation film 508 b was formed on thewhole surface of the opposing substrate, and the rubbing processing wasprovided.

[0255] Then, a plastic film substrate 507 in which the pixel section andthe drive circuit were adhered and the supporting body 510 are pastedtogether with a sealing medium which is to be an adhesive layer 512(FIG. 10D). Filler is mixed into sealing medium, and two sheets ofsubstrates are pasted together with uniform interval by this filler anda spacer in a column shape. Then, between both substrates, a liquidcrystal material 513 is implanted and completely sealed with a sealingcompound (not shown) (FIG. 10D). As a liquid crystal material 513, theknown liquid crystal material may be used.

[0256] In this way, a flexible active matrix type liquid crystal displaydevice is completed. Then, if necessary, the flexible substrate 507 oran opposing substrate is cut in the desired shape. Furthermore, apolarizing plate (not shown) or the like was appropriately providedusing the known technology. Then, a FPC (not shown) was pasted using theknown technology.

Example 4

[0257] The structure of the liquid crystal module obtained by Example 2or Example 3 is described with reference to the top view in FIG. 11. Asubstrate 412 in Example 2 or a substrate 507 in Example 3 correspondsto a substrate 301.

[0258] A pixel portion 304 is placed in the center of a substrate 301. Asource signal line driving circuit 302 for driving source signal linesis positioned above the pixel portion 304. Gate signal line drivingcircuits 303 for driving gate signal lines are placed to the left andright of the pixel portion 304. Although the gate signal line drivingcircuits 303 are symmetrical with respect to the pixel portion in thisExample, the liquid crystal module may have only one gate signal linedriving circuit on one side of the pixel portion. Of the above twooptions, a designer can choose the arrangement that suits betterconsidering the substrate size or the like of the liquid crystal module.However, the symmetrical arrangement of the gate signal line drivingcircuits shown in FIG. 11 is preferred in terms of circuit operationreliability, driving efficiency, and the like.

[0259] Signals are inputted to the driving circuits from flexibleprinted circuits (FPC) 305. The FPCs 305 are press-fit through ananisotropic conductive film or the like after opening contact holes inthe interlayer insulating film and resin film and forming a connectionelectrode 309 so as to reach the wiring lines arranged in given placesof the substrate 301. The connection electrode is formed from ITO inthis Example.

[0260] A sealing agent 307 is applied to the substrate along itsperimeter surrounding the driving circuits and the pixel portion. Anopposite substrate 306 is bonded to the substrate 301 by the sealingagent 307 while a spacer formed in advance on the film substrate keepsthe distance between the two substrates constant. A liquid crystalelement is injected through an area of the substrate that is not coatedwith the sealing agent 307. The substrates are then sealed by anencapsulant 308. The liquid crystal module is completed through theabove steps.

[0261] Although all of the driving circuits are formed on the filmsubstrate in the example shown here, several ICs may be used for some ofthe driving circuits. This Example may be combined with Example 1.

Example 5

[0262] Example 1 shows an example of reflective display device in whicha pixel electrode is formed from a reflective metal material. Shown inthis Example is an example of transmissive display device in which apixel electrode is formed from a light-transmitting conductive film.

[0263] The manufacture process up through the step of forming aninterlayer insulating film is identical with the process of Example 1,and the description thereof is omitted here. After the interlayerinsulating film is formed in accordance with Example 1, a pixelelectrode 601 is formed from a light-transmitting conductive film.Examples of the light-transmitting conductive film include an ITO(indium tin oxide alloy) film, an indium oxide-zinc oxide alloy(In₂O₃—ZnO) film, a zinc oxide (ZnO) film, and the like.

[0264] Thereafter, contact holes are formed in an interlayer insulatingfilm 600. A connection electrode 602 overlapping the pixel electrode isformed next. The connection electrode 602 is connected to a drain regionthrough the contact hole. At the same time the connection electrode isformed, source electrodes or drain electrodes of other TFTs are formed.

[0265] Although all of the driving circuits are formed on the substratein the example shown here, several ICs may be used for some of thedriving circuits.

[0266] An active matrix substrate is completed as above. After peelingthe substrate by using this active matrix substrate to bond plasticsubstrates, a liquid crystal module is manufactured in accordance withExamples 2 to 4. The liquid crystal module is provided with a back light604 and a light guiding plate 605, and is covered with a cover 606 tocomplete the active matrix liquid crystal display device of which apartial sectional view is shown in FIG. 12. The cover is bonded to theliquid crystal module using an adhesive or an organic resin. Whenbonding the plastic substrate to the opposite substrate, the substratesmay be framed so that the space between the frame and the substrates isfilled with an organic resin for bonding. Since the display device is oftransmissive type, the plastic substrate and the opposite substrate eachneeds a polarizing plate 603 to be bonded.

[0267] This Example may be combined with Examples 1 to 4.

Example 6

[0268] In the present Example, an example in which a light emittingdevice having an organic light emitting device (OLED) formed on aplastic substrate is prepared is shown in FIG. 13.

[0269] In FIG. 13A, the reference numeral 600 denotes a substrate, thereference numeral 601 denotes a nitride layer or metal layer, thereference numeral 602 denotes an oxide layer, the reference numeral 603denotes a primary coat insulating layer, the reference numeral 604 adenotes an element of a drive circuit 611, the reference numeral 604 band 604 c denote an element {504 b?} of the pixel section 612 and thereference numeral 605 denotes an OLED (Organic Light Emitting Device).Here, the term “element” is referred to a semiconductor element(typically, TFT) or MIM element or the like used for a switching elementof pixels if it is an active matrix type liquid crystal display device.Then, an interlayer insulating film 606 which covers these elements isformed. It is preferred that the interlayer insulating film 606 isflatter than the surface after the film formation. It should be notedthat the interlayer insulating film 606 is not necessarily provided.

[0270] It should be noted that the reference numerals 601-603 providedon the substrate 600 may be formed according to Embodiment 2 through 4.

[0271] These elements (including 604 a, 604 b and 604 c) may be preparedaccording to the n-channel type TFT 201 of the above-described Example 1and/or the p-channel type TFT 202 of the above-described Example 1.

[0272] An OLED 605 has a layer containing an organic compound (organiclight emitting material) obtaining electroluminescence generating byadding electric field (hereinafter, referred to as organic lightemitting layer), an anode layer and a cathode layer. Although as forelectroluminescence in organic compounds, there are a luminescence(fluorescence) generated when returning from singlet excitation state toground state and a luminescence (phosphorescence) generated whenreturning from triplet state to ground state, a light emitting device ofthe present invention may use either of the above-describedluminescences or both the above-described luminescences. It should benoted that in the present specification, all of the layers formedbetween the anode and cathode of OLED are defined as an organic lightemitting layer. Concretely, organic light emitting layers include alight emitting layer, a hole injection layer, an electronic injectionlayer, a hole transport layer, an electron transport layer or the like.Fundamentally, OLED has a structure in which anode/light emittinglayer/cathode are in turn laminated, in addition to this structure,there may be also some structures having anode/hole injectionlayer/light emitting layer/cathode or anode/hole injection layer/lightemitting layer/electron transport layer/cathode or the like are in turnlaminated.

[0273] According to the above-described method, the state of FIG. 13Awas obtained, the supporting body 608 is pasted using the adhesive layer607 (FIG. 13B). In the present Embodiment, a plastic substrate is usedas the supporting body 608. Concretely, as a supporting body, a resinsubstrate having thickness of 10 μm or more, for example, poly(ethersulfone) (PES), polycarbonate (PC), polyethylene terephthalate (PET), orpolyethylene naphthalate (PEN) can be used. It should be noted that itis required when the supporting body 608 and the adhesive layer 607 arelocated at the observer's side (on the side of the user of the lightemitting device) seen from the OLED, the supporting body 608 and theadhesive layer 607 are materials which transmits the light.

[0274] Subsequently, the substrate 600 on which the nitride layer ormetal layer 601 has been provided is pulled away by the physical means(FIG. 13 C). Since the film stress of the oxide layer 602 and the filmstress of the nitride layer or metal layer 601 are different, these canbe pulled away by a comparatively small force. Subsequently, it ispasted with an adhesive layer 609 consisted of an epoxy resin or thelike on a transferring body 610 (FIG. 13D). In the present Example, itcan be made light by using plastic film substrate for the transferringbody 610.

[0275] In this way, a flexible light emitting device sandwiched betweenthe supporting body 608 having the flexibility and the transferring body610 having the flexibility can be obtained. It should be noted that ifthe supporting body 608 and the transferring body 610 are made of thesame material, the coefficients of thermal expansion become equal,therefore, the influence from the stress distortion due to the change oftemperature can be made not easily exerted.

[0276] Then, if necessary, the supporting body 608 having theflexibility and the transferring body 610 are cut in the desired shape.Then, a FPC (not shown) was pasted using the known technology.

Example 7

[0277] In Example 6, an example in which after the supporting body waspasted, the substrate was peeled off and a plastic substrate as atransferring body was pasted has been shown. However, in the presentExample, an example in which after the substrate was peeled off, aplastic substrate as the first transferring body and a plastic substrateas the second transferring body are pasted and a light emitting deviceequipped with an OLED is prepared will be shown. FIG. 14 will be madereference for the purpose of describing it.

[0278] In FIG. 14A, the reference numeral 700 denotes a substrate, thereference numeral 701 denotes a nitride layer or metal layer, thereference numeral 702 denotes an oxide layer, the reference numeral 703denotes a primary coat insulating layer, the reference numeral 704 adenotes an element of a drive circuit 711, the reference numerals 704 b,704 c denote an element of the pixel section 712 and the referencenumeral 705 denotes an OLED (Organic Light Emitting Device). Here, theterm “element” is referred to a semiconductor element (typically, TFT)or MIM element or the like used for a switching element of pixels if itis an active matrix type liquid crystal display device. Then, aninterlayer insulating film 706 which covers these elements is formed. Itis preferred that the interlayer insulating film 706 is flatter than thesurface after the film formation. It should be noted that the interlayerinsulating film 706 is not necessarily provided.

[0279] It should be noted that the reference numerals 701-703 providedon the substrate 700 might be formed according to any of Embodiment 2through 4.

[0280] These elements (including 704 a, 704 b and 704 c) may be preparedaccording to the n-channel type TFT 201 of the above-described Example1, the p-channel type TFT 202 of the above-described Example 1.

[0281] According to the above-described method, the state of FIG. 14Awas obtained, the substrate 700 on which the nitride layer or metallayer 701 has been provided is pulled away by the physical means (FIG.14B). Since the film stress of the oxide layer 702 and the film stressof the nitride layer or metal layer 701 are different, these can bepulled away by comparatively small force. Subsequently, it is pastedwith an adhesive layer 709 consisted of an epoxy resin or the like on atransferring body (first transferring body) 710. In the present Example,it can be made light by using plastic film substrate for thetransferring body 710.

[0282] Subsequently, the base member (second transferring body) 708 ispasted together by the adhesive layer 707 (FIG. 14C). In the presentEmbodiment, a plastic substrate is used as the supporting body 708.Concretely, as the transferring body 710 and the base member 708, aresin substrate having thickness of 10 μm or more, for example,poly(ether sulfone) (PES), polycarbonate (PC), polyethyleneterephthalate (PET), or polyethylene naphthalate (PEN) can be used. Itshould be noted that it is required in the case where the base member708 and the adhesive layer 707 are located at the observer's side (onthe side of the user of the light emitting device) seen from the OLED,the base member 708 and the adhesive layer 707 are materials whichtransmit the light.

[0283] In this way, a flexible light emitting device sandwiched betweenthe base member 708 having the flexibility and the transferring body 710having the flexibility can be obtained. It should be noted that if thebase member 708 and the transferring body 710 are made of the samematerial, the coefficients of thermal expansion become equal, therefore,the influence from the stress distortion due to the change oftemperature can be made not easily exerted.

[0284] Then, if necessary, the base member 708 having the flexibilityand the transferring body 710 are cut in the desired shape. Then, a FPC(not shown) was pasted using the known technology.

Example 8

[0285] In Example 6 or Example 7, an example in which a flexible lightemitting device sandwiched between substrates having the flexibility isobtained has been shown. However, since a substrate consisted of aplastic in general easily transmits water content and oxygen, and thedeterioration of an organic light emitting layer is promoted by these,the life-span of the light emitting device easily tends to be shorter.

[0286] Hence, in the present Example, on a plastic substrate, aplurality of films for preventing oxygen and water content frompenetrating into the organic light emitting layer of OLED (hereinafter,referred to as barrier film) and a layer (stress relaxation film) havinga smaller stress than the foregoing barrier film between the foregoingbarrier films each other are provided. In the present specification, afilm in which a barrier film and a stress relaxation film are laminatedis referred to as “sealing film”.

[0287] Concretely, two or more layers of barrier films consisted ofinorganic matters (hereinafter, referred to as barrier film) areprovided, and further, a stress relaxation film having a resin betweenthe relevant two-layer barrier films (hereinafter, referred to as stressrelaxation film) is provided. Then, a light emitting device is formed byforming an OLED on the relevant three or more-layer insulating film andtightly sealing. It should be noted that since Example 6 and Example 7are the same except for the substrate, here, the description on them isomitted.

[0288] As shown in FIG. 15, two or more layers of barrier films areprovided on the film substrate 810, and further, a stress relaxationfilm is provided between the relevant two-layer barrier films. As aresult, between the film substrate 810 and the second adhesive layer809, a sealing film in which the relevant barrier film and the stressrelaxation film are laminated is formed.

[0289] Here, a layer consisted of a silicon nitride is film-formed as abarrier film 811 a on the film substrate 810 by a sputtering method, astress relaxation film 811 b having polyimide is film-formed on thebarrier film 811 a, a layer consisted of a silicon nitride isfilm-formed as the barrier film 811 c on the stress relaxation film 811b by a sputtering method. A layer in which the barrier film 811 a, thestress relaxation film 811 b, and the barrier film 811 c are laminatedis generally referred to as the sealing film 811. Then the filmsubstrate 810 on which the relevant sealing film 811 is formed may bepasted together using the second adhesive layer 809 on the peeled layercontaining an element.

[0290] Similarly, a layer consisted of a silicon nitride is formed as abarrier film 814 a on the film substrate 812 by a sputtering method, anda stress relaxation film 814 b having polyimide is formed on the barrierfilm 814 a. A layer consisted of a silicon nitride is formed as thebarrier film 814 c on the stress relaxation film 814 b by a sputteringmethod. A layer in which the barrier film 814 a, the stress relaxationfilm 814 b, and the barrier film 814 c are laminated is generallyreferred to as the sealing film 814. Then the film substrate 812 onwhich the relevant sealing film 814 is formed may be pasted togetherusing the second adhesive layer 809 on the peeled layer containing anelement.

[0291] It should be noted that as for a barrier film, if two layers ormore are provided, it might be available. Then, as a barrier film, asilicon nitride, a silicon oxynitride, an aluminum oxide, an aluminumnitride, an aluminum oxynitride or an aluminum silicide oxynitride(AlSiON) can be used.

[0292] Since an aluminum silicide oxynitride is comparatively high inthermal conductivity, the heat generated in an element can beefficiently discharged by utilizing it as a barrier film.

[0293] Moreover, for a stress relaxation film, a resin having atransparency can be used. Representatively, polyimide, acryl, polyamide,polyimideamide, benzocyclobutene, epoxy resin or the like is capable ofbeing used. It should be noted that resins except for resins describedabove could be also used. Here, after polyimide which is a typethermally polymerized was coated, it is burned and formed.

[0294] The film formation of a silicon nitride is performed at 0.4 Pa ofsputtering pressure by introducing argon, maintaining the substratetemperature as 150° C. Then, using a silicon as a target, the filmformation was performed by introducing nitrogen and hydrogen except forargon. In the case of a silicon oxynitride, the film formation isperformed at about 0.4 Pa of sputtering pressure by introducing argonand maintaining the substrate temperature as 150° C. Then, using asilicon as a target, the film formation was performed by introducingnitrogen, nitrogen dioxide and hydrogen except for argon. It should benoted that as a target, a silicon oxide might be used.

[0295] It is desirable that the film thickness of the barrier film is inthe range from 50 nm to 3 μm. Here, a silicon nitride was formed in filmthickness of 1 μm.

[0296] It should be noted that the film formation method of a barrierfilm is not limited only to sputtering method, the person who carriesout it can appropriately set its method. For example, the film formationmay be performed using a LPCVD method, a plasma CVD method or the like.Moreover, it is desirable that the film thickness of the stressrelaxation film is in the range from 200 nm to 2 μm. Here, polyimide wasformed in film thickness of 1 μm.

[0297] An OLED can be completely interrupted from the air by applying aplastic substrate on which a sealing film of the present Example isprovided as the supporting body 608 or the transferring body 610 inExample 6 or the base member 708 or the transferring body 710 in Example7, thereby capable of nearly completely suppressing the deterioration ofan organic light emitting material due to oxidation, and capable oflargely enhancing the reliability of an OLED.

Example 9

[0298] The constitution of a module having an OLED obtained according toExample 6 or Example 7, what is called the constitution of an EL modulewill be described below with reference to a top view of FIG. 16. Thetransferring body 610 in Example 7 or the transferring body 710 inExample 8 corresponds to the film substrate 900.

[0299]FIG. 16A is a top view showing a module having an OLED, what iscalled an EL module, and FIG. 16B is a sectional view taken on line A-A′of FIG. 16A. A pixel section 902, the source side drive circuit 901 andthe gate side drive circuit 903 are formed on a film substrate 900 (forexample, plastic substrate or the like) having the flexibility. Thesepixel section and drive circuit can be obtained according to theabove-described Example. Moreover, the reference numeral 918 denotes asealing member, the reference numeral 919 denotes a DLC film, the pixelsection and the drive circuit section are covered by the sealing member918, and its sealing member is covered with the protective film 919.Furthermore, it is sealed with a cover member 920 using an adhesivemember. The shape of the covering member 920 and the shape of thesupporting body are not particularly limited, one having a plane, onehaving a curved surface, and one having a property capable of beingcurved, or one in a film shape may be used. It is desirable that thecovering member 920 for enduring the distortion due to the heat andexternal force is the same material with the film substrate 900, forexample, a plastic substrate is used, the substrate processed in aconcave section shape (depth, 3-10 μm) as shown in FIG. 16 is used. Itis desirable that it is further processed, and a concave section (depth,50-200 μm) on which desiccant 921 can be set is formed. Moreover, in thecase where an EL module is fabricated in multiple pattern, after thesubstrate and the covering member were pasted together, it may be cut sothat the end faces are matched with each other using Co₂ laser or thelike.

[0300] Moreover, here not shown in FIGS., in order to prevent thebackground from being reflected due to the reflection of the appliedmetal layer (here, cathode or the like), a circular polarizing meansreferred to as a circular polarizing plate consisted of a phasedifference plate (λ/4 plate) and polarizing plate may be provided on thesubstrate 900.

[0301] It should be noted that the reference numeral 908 denotes awiring for transmitting a signal inputted into the source side drivecircuit 901 and the gate side drive circuit 903, it receives a videosignal and a clock signal from FPC (Flexible Print Circuit) which is anexternal input terminal. Moreover, a light emitting device of thepresent Example may be of a digital drive, or an analog drive, or avideo signal may be a digital signal, or an analog signal. It should benoted that here, only FPC is shown in FIGS., but a print wiring base(PWB) may be mounted on this FPC. It is defined that a light emittingdevice in the present specification includes not only the main body ofthe light emitting device but also the state where FPC or PWB is mountedon the main body. Moreover, although a complex integrated circuit(memory, CPU, controller, D/A converter or the like) are capable ofbeing formed on the same substrate with these pixel section and drivecircuit, the fabrication with a small number of masks is difficult.Therefore, it is preferred that an IC chip equipped with a memory, aCPU, a controller, a D/A converter or the like is mounted by COG (ChipOn Glass) method, or TAB (Tape Automated Bonding) method or a wirebonding method.

[0302] Next, the sectional structure will be described below withreference to FIG. 16B. An insulating film 910 is provided on the filmsubstrate 900, the pixel section 902 and the gate side drive circuit 903have been formed above the insulating film 910, and the pixel section902 is formed by a plurality of pixels containing the pixel electrode912 electrically connected to the TFT 911 for controlling the currentand its drain. It should be noted that after the peeled off layer formedon the substrate was peeled off according to any one of Embodiment 1through 4, the film substrate 900 is pasted.

[0303] Moreover, the gate side drive circuit 903 is formed using a CMOScircuit that a n-channel type TFT 913 and a p-channel type TFT 914 arecombined.

[0304] These TFTs (including 911,913 and 914) may be fabricatedaccording to the n-channel type TFT 201 of the above-described Example1, the p-channel type TFT 202 of the above-described Example 1.

[0305] It should be noted that as an insulating film provided betweenthe TFT and OLED, it is preferable that a material for not only blockingthe diffusion of the impurity ion such as alkali metal ion, alkalineearth metal ion or the like, but also aggressively absorbing theimpurity ion such as alkali metal ion, alkaline earth metal ion or thelike, and further, a material endurable for the temperature of laterprocesses is suitable. As a material suitable for these conditions, asone example, a silicon nitride film containing a large amount offluorine is listed. The fluorine density containing in the film of thesilicon nitride film is 1×10¹⁹/cm³ or more, preferably, the compositionratio of fluorine is made in the range from 1 to 5%. The fluorine in thesilicon nitride film is bonded to alkali metal ion, alkaline earth ionor the like, and absorbed in the film. Moreover, as the other example,an organic resin film containing a fine particle consisted of antimony(Sb) compound, tin (Sn) compound or indium (In) compound, for example,an organic resin film containing antimony pentaoxide fine particle(Sb₂O₅. nH₂O) is also listed. It should be noted that this organic resinfilm contains a fine particle having 10-20 nm in average particlediameter, and light transmittance is also very high. An antimonycompound represented by this antimony pentaoxide fine particle easilyabsorbs impurity ion such as alkali metal ion or alkaline earth metalion.

[0306] Moreover, as the other material of an insulating film providedbetween the active layer of TFT and the OLED, a layer indicated byAlN_(x)O_(y) may be used. An oxynitride layer (layer indicated byAlN_(x)O_(y)) obtained by performing the film formation under theatmosphere that argon gas, nitride gas, nitrogen gas and oxygen gas aremixed using aluminum nitride (AlN) target by a sputtering method is afilm containing nitrogen in the range from 2.5 atm % to 47.5 atm %,characterized by the fact that it has an effect capable of blockingwater content and oxygen, in addition to this, has a high thermalconductivity and an effect of heat release, and further, has a very hightranslucency. In addition, it can prevent impurities such as alkalimetal, alkaline earth metal or the like from penetrating into the activelayer of TFT.

[0307] The pixel electrode 912 functions as an anode of the OLED.Moreover, a bank 915 is formed on both ends of the pixel electrode 912,an EL layer 916 and a cathode 917 of the light emitting element areformed on the pixel electrode 912.

[0308] As the EL layer 916, an EL layer (layer for light emitting andmaking carrier perform the migrate for it) may be formed by freelycombining the light emitting layer, a charge injection layer or a chargeimplantation layer. For example, low molecular system organic ELmaterial and high molecular system organic EL material may be employed.Moreover, as an EL layer, a thin film consisted of a light emittingmaterial (singlet compound) which light-emits (fluorescence) due tosinglet excitation, or a thin film consisted of a light emittingmaterial (triplet compound) which emits (phosphorescence) due to tripletexcitation can be used. Moreover, an inorganic material such as siliconcarbide or the like is capable of being used as a charge transport layerand a charge injection layer. For these organic EL material andinorganic material, the known materials can be used. The cathode 917also functions the wiring common to the all of the pixels, andelectrically connected to the FPC 909 via the connecting wiring 908. Andfurther, elements contained in the pixel section 902 and on the gateside drive circuit 903 are all covered by the cathode 917, the sealingmember 918, and the protective film 919.

[0309] It should be noted that as the sealing member 918, it ispreferable that a material being transparent to the visible light orsemitransparent is used if it is possible. Moreover, it is desirablethat the sealing member 918 is a material for transmitting water contentand oxygen as little as possible.

[0310] Moreover, after the light emitting element was completely coveredby utilizing the sealing member 918, it is preferred that the protectivefilm 919 consisted of at least DLC film or the like is provided on thesurface (exposed surface) of the sealing member 918 as shown in FIG. 16.Moreover, the protective film may be provided on the entire surfaceincluding the back side of the substrate. Here, it is necessary to noteso that the protective film is not formed on the portion on which theexternal input terminal (FPC) is provided. It may be made so that theprotective film is not formed by utilizing a mask, or it maybe made sothat the protective film is not formed by covering the exterior inputterminal portion with a tape such as a masking tape used in a CVDdevice.

[0311] The light emitting element can be completely interrupted from theexternal by sealing the light emitting element with the sealing member918 and the protective film in the above-described structure, and it canprevent the substances promoting the deterioration due to the oxidationof EL layer occurred by water content, oxygen or the like from theexternal from penetrating. In addition to this, if a film having athermal conductivity (AlON film, AlN film or the like) is used as aprotective film, the heat generated when it is driven can be released.Therefore, a light emitting device with high reliability can beobtained.

[0312] Moreover, the pixel electrode is made a cathode, the EL layer andthe anode are laminated and it may be configured so that the light isemitted in the reverse direction. Its one example is shown in FIG. 17.It should be noted that since a top view is the same, the diagram anddescription are omitted.

[0313] The sectional structure shown in FIG. 17 will be described below.As a film substrate 1000, a plastic substrate is used. It should benoted that after the peeled off layer formed on the substrate was peeledoff according to any one of Embodiment 1 through 4, the film substrate1000 is pasted. An insulating film 1010 is provided on the filmsubstrate 1000, above the insulating film 1010, the pixel section 1002and the gate side drive circuit 1003 are formed and the pixel section1002 is formed by a plurality of pixels containing a pixel electrode1012 electrically connected to a TFT for controlling the current 1011and its drain. Moreover, the gate side drive circuit 1003 is formedusing a CMOS circuit that a n-channel type TFT 1013 and a p-channel typeTFT 1014 are combined.

[0314] The pixel electrode 1012 functions as a cathode of the lightemitting element. Moreover, a bank 1015 is formed on both ends of thepixel electrode 1012, an EL layer 1016 and an anode 1017 of the lightemitting element are formed on the pixel electrode 1012.

[0315] The anode 1017 also functions as the common wiring to all of thepixels, and electrically connected to the FPC 1009 via a connectingwiring 1008. Furthermore, the element contained in the pixel section1002 and the gate side drive circuit 1003 are all covered by theprotective film 1019 consisted of the anode 1017, the sealing member1018 and DLC or the like. Moreover, the covering member 1021 and thesubstrate 1000 were pasted using the adhesive. Moreover, the concaveportion is provided on the covering member, and the desiccant 1021 isset on the covering member.

[0316] It should be noted that as the sealing member 1018, it ispreferable that a material being transparent to the visible light orsemitransparent is used if it is possible. Moreover, it is desirablethat the sealing member 1018 is a material for transmitting watercontent and oxygen as little as possible.

[0317] Moreover, in FIG. 17, since the pixel electrode was made cathode,and the EL layer and the anode were laminated, the direction of thelight emission is a direction of the arrow indicted in FIG. 17.

[0318] Moreover, here not shown in FIGS., in order to prevent thebackground from being reflected due to the reflection of the appliedmetal layer (here, cathode or the like), a circular polarizing meansreferred to as a circular polarizing plate consisted of a phasedifference plate (λ/4plate) and polarizing plate may be provided on thecovering member 1020.

[0319] Since in the present Example 1, a TFT having a highly qualifiedelectric characteristics and a high reliability obtained in Example 1 isused, a light emitting element having a higher reliability comparing tothose of the conventional elements can be formed. Moreover, an electricapparatus having a high performance can be obtained by utilizing a lightemitting device having such light emitting elements as a displaysection.

[0320] It should be noted that the present Example could be freelycombined with Example 1, Example 7, Example 8 or Example 9.

[0321] The present invention can enhance the reliability of an elementwithout damaging the semiconductor layer since peeling off from thesubstrate by the physical means.

[0322] Moreover, the present invention is capable of peeling off notonly a peeled off layer having a small area but also a peeled off layerhaving a large area over the entire surface at excellent yield ratio.

[0323] In addition, since the present invention is capable of easilypeeling off by the physical means, for example, is capable of pullingaway by human's hands, it can be said that the process is suitable formass production. Moreover, in the case where a manufacturing equipmentis prepared in order to pull away the peeled off layer when performingthe mass production, a large size fabrication equipment can also beprepared at low cost.

Example 10

[0324] Various modules (active matrix liquid crystal module, activematrix EL module and active matrix EC module) can be completed by thepresent invention. Namely, all of the electronic apparatuses arecompleted by implementing the present invention.

[0325] Following can be given as such electronic apparatuses: videocameras; digital cameras; head mounted displays (goggle type displays);car navigation systems; projectors; car stereo; personal computers;portable information terminals (mobile computers, mobile phones orelectronic books etc.) etc. Examples of these are shown in FIGS. 18 and19.

[0326]FIG. 18A is a personal computer which comprises: a main body 2001;an image input section 2002; a display section 2003; and a keyboard2004.

[0327]FIG. 18B is a video camera which comprises: a main body 2101; adisplay section 2102; a voice input section 2103; operation switches2104; a battery 2105 and an image receiving section 2106.

[0328]FIG. 18C is a mobile computer which comprises: a main body 2201; acamera section 2202; an image receiving section 2203; operation switches2204 and a display section 2205.

[0329]FIG. 18D is a goggle type display which comprises: a main body2301; a display section 2302; and an arm section 2303.

[0330]FIG. 18E is a player using a recording medium which records aprogram (hereinafter referred to as a recording medium) which comprises:a main body 2401; a display section 2402; a speaker section 2403; arecording medium 2404; and operation switches 2405. This apparatus usesDVD (digital versatile disc), CD, etc. for the recording medium, and canperform music appreciation, film appreciation, games and use forInternet.

[0331]FIG. 18F is a digital camera which comprises: a main body 2501; adisplay section 2502; a view finder 2503; operation switches 2504; andan image receiving section (not shown in the figure).

[0332]FIG. 19A is a portable telephone which comprises: a main body2901; a voice output section 2902; a voice input section 2903; a displaysection 2904; operation switches 2905; an antenna 2906; and an imageinput section (CCD, image sensor, etc.) 2907 etc.

[0333]FIG. 19B is a portable book (electronic book) which comprises: amain body 3001; display sections 3002 and 3003; a recording medium 3004;operation switches 3005 and an antenna 3006 etc.

[0334]FIG. 19C is a display which comprises: a main body 3101; asupporting section 3102; and a display section 3103 etc.

[0335] In addition, the display shown in FIG. 19C has small andmedium-sized or large-sized screen, for example a size of 5 to 20inches. Further, to manufacture the display part with such sizes, it ispreferable to mass-produce by gang printing by using a substrate withone meter on a side.

[0336] As described above, the applicable range of the present inventionis very large, and the invention can be applied to electronicapparatuses of various areas. Note that the electronic devices of thisExample can be achieved by utilizing any combination of constitutions inExamples 1 to 9.

What is claimed is:
 1. A peeling off method comprising: forming a peeledoff layer comprising a lamination containing an oxide layer in contactwith a nitride layer provided over a substrate; subsequently peeling ofsaid peeled off layer from said substrate inside said oxide layer or atan interface of said oxide layer by physical means.
 2. A methodaccording to claim 1 wherein said oxide layer comprises a single layercomprising a material selected from the group consisting of a siliconoxide and metal oxide, or a lamination thereof.
 3. A method according toclaim 1 further comprising conducting heat treatment or a laser lightirradiation before said peeling by said physical means.
 4. A peeling offmethod comprising: forming a peeled off layer comprising a laminationcontaining an oxide layer in contact with a nitride layer provided overa substrate; adhering said peeled off layer to a support; subsequentlypeeling off said peeled off layer adhered to said support from saidsubstrate inside said oxide layer or at an interface of said oxide layerby physical means.
 5. A method according to claim 4 wherein a heatprocessing or an irradiation of a laser beam is performed before saidsupporting body is adhered.
 6. A method according to claim 4 whereinsaid oxide layer comprises a single layer comprising a material selectedfrom the group consisting of a silicon oxide and metal oxide, or alamination thereof.
 7. A method according to claim 4 further comprisingconducting heat treatment or a laser light irradiation before saidpeeling by said physical means.
 8. A peeling off method comprising:forming a peeled off layer comprising a lamination containing an oxidelayer in contact with a metal layer provided over a substrate;subsequently peeling of said peeled off layer from said substrate insidesaid oxide layer or at an interface of said oxide layer by physicalmeans.
 9. A method according to claim 8, wherein said metal layer is anitride.
 10. A method according to claim 8, wherein said metal layercomprises an element selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe,Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, a monolayer consisted ofalloy materials or compound materials whose principal component is saidelement or a lamination of these metals or a mixture.
 11. A methodaccording to claim 8 wherein said oxide layer comprises a single layercomprising a material selected from the group consisting of a siliconoxide and metal oxide, or a lamination thereof.
 12. A method accordingto claim 8 further comprising conducting heat treatment or a laser lightirradiation before said peeling by said physical means.
 13. A peelingoff method comprising: forming a peeled off layer comprising alamination containing an oxide layer in contact with a metal layerprovided over a substrate; adhering said peeled off layer to a support;subsequently peeling off said peeled off layer adhered to said supportfrom said substrate inside said oxide layer or at an interface of saidoxide layer by physical means.
 14. A method according to claim 13,wherein said metal layer is a nitride.
 15. A method according to claim13, wherein said metal layer comprises an element selected from Ti, Al,Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, amonolayer consisted of alloy materials or compound materials whoseprincipal component is said element or a lamination of these metals or amixture.
 16. A method according to claim 13 wherein said oxide layercomprises a single layer comprising a material selected from the groupconsisting of a silicon oxide and metal oxide, or a lamination thereof.17. A method according to claim 13 further comprising conducting heattreatment or a laser light irradiation before said peeling by saidphysical means.
 18. A method according to claim 13 further comprisingconducting a heat processing or an irradiation of a laser beam beforesaid supporting body is adhered.
 19. A method of manufacturing asemiconductor device comprising: forming a nitride layer over asubstrate; forming an oxide layer over said nitride layer; forming aninsulating layer over said oxide layer; forming an element over saidinsulating layer; adhering said element to a support; peeling off saidsupport inside said oxide layer or at an interface with said oxide layerfrom the substrate by physical means after adhering said element to thesupport; and adhering a transferring body to said insulating layer orsaid oxide layer to sandwich said element between said support and saidtransferring body.
 20. A method according to claim 19, wherein saidsupport is a film substrate or base member.
 21. A method according toclaim 19 wherein said transferring body is a film substrate or basemember.
 22. A method according to claim 19 wherein a heat processing oran irradiation of a laser beam is performed before adhering saidsupport.
 23. A method according to claim 19 wherein a heat processing oran irradiation of a laser beam is performed before peeling off by saidphysical means.
 24. A method according to claim 19 wherein said elementis a thin film transistor comprising a semiconductor layer as an activelayer, and in said step of forming said semiconductor layer, asemiconductor layer having an amorphous structure is crystallized byperforming a heat processing or a irradiation of a laser beam to beformed into a semiconductor layer having a crystal structure.
 25. Amethod according to claim 19 wherein said support is an opposingsubstrate, and said element has a pixel electrode, and a liquid crystalmaterial is provided between said pixel electrode and said opposingsubstrate.
 26. A method according to claim 19 wherein said support is asealing member, and said element is a light emitting element.
 27. Amethod according to claim 19 wherein said oxide layer is a monolayercomprising a material selected from the group consisting of a siliconoxide and a metal oxide or a lamination thereof.
 28. A method accordingto claim 20, wherein said semiconductor device has a first insulatingfilm, a second insulating film and a third insulating film over saidfilm substrate, and a film stress of said second insulating filmsandwiched between said first insulating film and said third insulatingfilm is smaller than those of said first insulating film and said thirdinsulating film.
 29. A method according to claim 21, wherein saidsemiconductor device has a first insulating film, a second insulatingfilm and a third insulating film over said film substrate, and a filmstress of said second insulating film sandwiched between said firstinsulating film and said third insulating film is smaller than those ofsaid first insulating film and said third insulating film.
 30. A methodof manufacturing a semiconductor device comprising: forming a nitridelayer over a substrate; forming an oxide in a granular shape over saidnitride layer; forming an oxide layer for covering said oxide; formingan insulating layer over said oxide layer; forming an element over saidinsulating layer; adhering a support to said element; peeling off saidsupport inside said oxide layer or at an interface with said oxide layerfrom the substrate by physical means after adhering said support to saidelement; and adhering a transferring body to said insulating layer orsaid oxide layer to sandwich said element between said support and saidtransferring body.
 31. A method according to claim 30, wherein saidsupport is a film substrate or base member.
 32. A method according toclaim 30 wherein said transferring body is a film substrate or basemember.
 33. A method according to claim 30 wherein a heat processing oran irradiation of a laser beam is performed before adhering saidsupport.
 34. A method according to claim 30 wherein a heat processing oran irradiation of a laser beam is performed before peeling off by saidphysical means.
 35. A method according to claim 30 wherein said elementis a thin film transistor comprising a semiconductor layer as an activelayer, and in said step of forming said semiconductor layer, asemiconductor layer having an amorphous structure is crystallized byperforming a heat processing or a irradiation of a laser beam to beformed into a semiconductor layer having a crystal structure.
 36. Amethod according to claim 30 wherein said support is an opposingsubstrate, and said element has a pixel electrode, and a liquid crystalmaterial is provided between said pixel electrode and said opposingsubstrate.
 37. A method according to claim 30 wherein said support is asealing member, and said element is a light emitting element.
 38. Amethod according to claim 30 wherein said oxide layer is a monolayercomprising a material selected from the group consisting of a siliconoxide and a metal oxide or a lamination thereof.
 39. A method accordingto claim 31, wherein said semiconductor device has a first insulatingfilm, a second insulating film and a third insulating film over saidfilm substrate, and a film stress of said second insulating filmsandwiched between said first insulating film and said third insulatingfilm is smaller than those of said first insulating film and said thirdinsulating film.
 40. A method according to claim 32, wherein saidsemiconductor device has a first insulating film, a second insulatingfilm and a third insulating film over said film substrate, and a filmstress of said second insulating film sandwiched between said firstinsulating film and said third insulating film is smaller than those ofsaid first insulating film and said third insulating film.
 41. A methodof manufacturing a semiconductor device comprising: forming a layercontaining a metal material over a substrate, forming an oxide layerover said layer containing the metal material, forming an insulatinglayer over said oxide layer, forming an element over said insulatinglayer, adhering a support to said element; peeling off said supportinside said oxide layer or at an interface with said oxide layer fromthe substrate by physical means after adhering said support to saidelement, and adhering a transferring body to said insulating layer orsaid oxide layer to sandwich said element between said support and saidtransferring body.
 42. A method according to claim 41, wherein saidsupport is a film substrate or base member.
 43. A method according toclaim 41 wherein said transferring body is a film substrate or basemember.
 44. A method according to claim 41 wherein a heat processing oran irradiation of a laser beam is performed before adhering saidsupport.
 45. A method according to claim 41 wherein a heat processing oran irradiation of a laser beam is performed before peeling off by saidphysical means.
 46. A method according to claim 41 wherein said elementis a thin film transistor comprising a semiconductor layer as an activelayer, and in said step of forming said semiconductor layer, asemiconductor layer having an amorphous structure is crystallized byperforming a heat processing or a irradiation of a laser beam to beformed into a semiconductor layer having a crystal structure.
 47. Amethod according to claim 41 wherein said support is an opposingsubstrate, and said element has a pixel electrode, and a liquid crystalmaterial is provided between said pixel electrode and said opposingsubstrate.
 48. A method according to claim 41 wherein said support is asealing member, and said element is a light emitting element.
 49. Amethod according to claim 41 wherein said oxide layer is a monolayercomprising a material selected from the group consisting of a siliconoxide and a metal oxide or a lamination thereof.
 50. A method accordingto claim 41 wherein said layer containing the metal material is anitride.
 51. A method according to claim 41 wherein said metal materialis an element selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co,Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, or a monolayer consisted of alloymaterial or compound material comprising said element as a principalcomponent, or a lamination of these metals or a mixture of these.
 52. Amethod according to claim 42, wherein said semiconductor device has afirst insulating film, a second insulating film and a third insulatingfilm over said film substrate, and a film stress of said secondinsulating film sandwiched between said first insulating film and saidthird insulating film is smaller than those of said first insulatingfilm and said third insulating film.
 53. A method according to claim 43,wherein said semiconductor device has a first insulating film, a secondinsulating film and a third insulating film over said film substrate,and a film stress of said second insulating film sandwiched between saidfirst insulating film and said third insulating film is smaller thanthose of said first insulating film and said third insulating film. 54.A method of manufacturing a semiconductor device comprising: forming alayer containing a metal material over a substrate, forming an oxide ina granular shape over said layer containing the metal material, formingan oxide layer for covering said oxide, forming an insulating layer oversaid oxide layer, forming an element over said insulating layer,adhering a support to said element; peeling off said support inside saidoxide layer or at an interfacewith said oxide layer from the substrateby physical means after adhering said support to said element; andadhering a transferring body to said insulating layer or said oxidelayer to sandwich said element between said support and saidtransferring body.
 55. A method according to claim 54, wherein saidsupport is a film substrate or base member.
 56. A method according toclaim 54 wherein said transferring body is a film substrate or basemember.
 57. A method according to claim 54 wherein a heat processing oran irradiation of a laser beam is performed before adhering saidsupport.
 58. A method according to claim 54 wherein a heat processing oran irradiation of a laser beam is performed before peeling off by saidphysical means.
 59. A method according to claim 54 wherein said elementis a thin film transistor comprising a semiconductor layer as an activelayer, and in said step of forming said semiconductor layer, asemiconductor layer having an amorphous structure is crystallized byperforming a heat processing or a irradiation of a laser beam to beformed into a semiconductor layer having a crystal structure.
 60. Amethod according to claim 54 wherein said support is an opposingsubstrate, and said element has a pixel electrode, and a liquid crystalmaterial is provided between said pixel electrode and said opposingsubstrate.
 61. A method according to claim 54 wherein said support is asealing member, and said element is a light emitting element.
 62. Amethod according to claim 54 wherein said oxide layer is a monolayercomprising a material selected from the group consisting of a siliconoxide and a metal oxide or a lamination thereof.
 63. A method accordingto claim 54 wherein said layer containing the metal material is anitride.
 64. A method according to claim 54 wherein said metal materialis an element selected from Ti, Al, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co,Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, or a monolayer consisted of alloymaterial or compound material comprising said element as a principalcomponent, or a lamination of these metals or a mixture of these.
 65. Amethod according to claim 55, wherein said semiconductor device has afirst insulating film, a second insulating film and a third insulatingfilm over said film substrate, and a film stress of said secondinsulating film sandwiched between said first insulating film and saidthird insulating film is smaller than those of said first insulatingfilm and said third insulating film.
 66. A method according to claim 56,wherein said semiconductor device has a first insulating film, a secondinsulating film and a third insulating film over said film substrate,and a film stress of said second insulating film sandwiched between saidfirst insulating film and said third insulating film is smaller thanthose of said first insulating film and said third insulating film. 67.A method of manufacturing a semiconductor device comprising: forming alayer containing a metal material over a substrate; forming an oxidelayer over said layer containing the metal material; forming aninsulating layer over said oxide layer; forming an element over saidinsulating layer; peeling off inside said oxide layer or at an interfacewith said oxide layer from the substrate by physical means; adhering afirst transferring body to said insulating layer or said oxide layer;and adhering a second transferring body to said element to sandwich saidelement between said first transferring body and said secondtransferring body.
 68. A method according to claim 67 wherein said layercontaining the metal material is a nitride.
 69. A method according toclaim 67 wherein said metal material is an element selected from Ti, Al,Ta, W, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, ora monolayer consisted of alloy material or compound material comprisingsaid element as a principal component, or a lamination of these metalsor a mixture of these.
 70. A method according to claim 67, wherein aheat processing or an irradiation of a laser beam is performed beforepeeling off by said physical means.
 71. A method of manufacturing asemiconductor device comprising: forming a nitride layer over asubstrate, forming an oxide layer over said nitride layer, forming aninsulating layer over said oxide layer, forming an element over saidinsulating layer, peeling off inside said oxide layer or at an interfacewith said oxide layer from the substrate by physical means, adhering afirst transferring body to said insulating layer or said oxide layer,and adhering a second transferring body to said element to sandwich saidelement between said first transferring body and said secondtransferring body.
 72. A method according to claim 71, wherein a heatprocessing or an irradiation of a laser beam is performed before peelingoff by said physical means.
 73. A semiconductor device comprising: asupport; a peeled off layer adhered to said support by an adhesivematerial, said peeled off layer comprising a silicon oxide film; and ametallic material provided between said silicon oxide film and saidadhesive material.
 74. A device according to claim 73 wherein saidmetallic material comprises an element selected from the groupconsisting of W, Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh,Pd, Os, Ir and Pt, or an alloy material or a compound material whichcomprises said element as a main component.
 75. A device according toclaim 1 wherein said semiconductor device is incorporated into at leastone selected from the group consisting of a personal computer, a videocamera, a mobile computer, a goggle type display, a player using arecording medium, a digital camera, a portable telephone, a portablebook and a display.